JPS54125987A - Vmos metha structure and method of fabricating same - Google Patents

Vmos metha structure and method of fabricating same

Info

Publication number
JPS54125987A
JPS54125987A JP1714379A JP1714379A JPS54125987A JP S54125987 A JPS54125987 A JP S54125987A JP 1714379 A JP1714379 A JP 1714379A JP 1714379 A JP1714379 A JP 1714379A JP S54125987 A JPS54125987 A JP S54125987A
Authority
JP
Japan
Prior art keywords
vmos
metha
fabricating same
fabricating
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1714379A
Other languages
English (en)
Inventor
Ji Ji Buan Ruun Pooru
Esu Oruteirii Ansonii
Tei Esu Kei Suchiibu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of JPS54125987A publication Critical patent/JPS54125987A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/028—Dicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP1714379A 1978-02-17 1979-02-16 Vmos metha structure and method of fabricating same Pending JPS54125987A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/878,685 US4219835A (en) 1978-02-17 1978-02-17 VMOS Mesa structure and manufacturing process

Publications (1)

Publication Number Publication Date
JPS54125987A true JPS54125987A (en) 1979-09-29

Family

ID=25372576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1714379A Pending JPS54125987A (en) 1978-02-17 1979-02-16 Vmos metha structure and method of fabricating same

Country Status (5)

Country Link
US (1) US4219835A (ja)
JP (1) JPS54125987A (ja)
DE (1) DE2904769C2 (ja)
FR (1) FR2417855A1 (ja)
GB (1) GB2014787B (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165360A (en) * 1980-05-23 1981-12-18 Matsushita Electronics Corp Manufacture of semiconductor device
JPS56169370A (en) * 1980-04-30 1981-12-26 Siemens Ag Mis semiconductor device and method of producing same
JPS5752170A (en) * 1980-07-21 1982-03-27 Siliconix Inc Power transistor
JPS5868044U (ja) * 1981-10-30 1983-05-09 日産自動車株式会社 Ｍｏｓ半導体装置
JPS598374A (ja) * 1982-07-05 1984-01-17 Matsushita Electronics Corp 縦型構造電界効果トランジスタの製造方法
JPS6393144A (ja) * 1986-05-19 1988-04-23 テキサス　インスツルメンツ　インコ−ポレイテツド エピタキシャル累層のトランジスタ構造及びその製造方法

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855972C2 (de) * 1978-12-23 1984-09-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiteranordnung mit zwei integrierten und antiparallel geschalteten Dioden sowie Verfahren zu ihrer Herstellung
US4269636A (en) * 1978-12-29 1981-05-26 Harris Corporation Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking
US4502208A (en) * 1979-01-02 1985-03-05 Texas Instruments Incorporated Method of making high density VMOS electrically-programmable ROM
GB2049273B (en) * 1979-05-02 1983-05-25 Philips Electronic Associated Method for short-circuting igfet source regions to a substrate
DE2930780C2 (de) * 1979-07-28 1982-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines VMOS-Transistors
JPS5681974A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of mos type semiconductor device
US4379305A (en) * 1980-05-29 1983-04-05 General Instrument Corp. Mesh gate V-MOS power FET
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
GB2103419A (en) * 1981-08-04 1983-02-16 Siliconix Inc Field effect transistor with metal source
DE3132955A1 (de) * 1981-08-20 1983-03-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor und verfahren zu seiner herstellung
DE3240162C2 (de) * 1982-01-04 1996-08-01 Gen Electric Verfahren zum Herstellen eines doppelt-diffundierten Leistungs-MOSFET mit Source-Basis-Kurzschluß
US4598461A (en) * 1982-01-04 1986-07-08 General Electric Company Methods of making self-aligned power MOSFET with integral source-base short
US4503598A (en) * 1982-05-20 1985-03-12 Fairchild Camera & Instrument Corporation Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques
US4541001A (en) * 1982-09-23 1985-09-10 Eaton Corporation Bidirectional power FET with substrate-referenced shield
US4636823A (en) * 1984-06-05 1987-01-13 California Institute Of Technology Vertical Schottky barrier gate field-effect transistor in GaAs/GaAlAs
FR2631488B1 (fr) * 1988-05-10 1990-07-27 Thomson Hybrides Microondes Circuit integre hyperfrequence de type planar, comportant au moins un composant mesa, et son procede de fabrication
JPH0215652A (ja) * 1988-07-01 1990-01-19 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5506421A (en) * 1992-11-24 1996-04-09 Cree Research, Inc. Power MOSFET in silicon carbide
US5534106A (en) * 1994-07-26 1996-07-09 Kabushiki Kaisha Toshiba Apparatus for processing semiconductor wafers
US5550399A (en) * 1994-11-03 1996-08-27 Kabushiki Kaisha Toshiba Integrated circuit with windowed fuse element and contact pad
US5648670A (en) * 1995-06-07 1997-07-15 Sgs-Thomson Microelectronics, Inc. Trench MOS-gated device with a minimum number of masks
US5601687A (en) * 1995-09-11 1997-02-11 The United States Of America As Represented By The Secretary Of The Air Force Mask design
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
US6214127B1 (en) 1998-02-04 2001-04-10 Micron Technology, Inc. Methods of processing electronic device workpieces and methods of positioning electronic device workpieces within a workpiece carrier
US6380027B2 (en) 1999-01-04 2002-04-30 International Business Machines Corporation Dual tox trench dram structures and process using V-groove
KR100416174B1 (ko) * 1999-03-31 2004-01-24 세이코 엡슨 가부시키가이샤 반도체 장치의 제조 방법
DE10040458B4 (de) * 2000-08-18 2015-08-27 Infineon Technologies Ag Vertikaler Feldeffekt-Transistor und Verfahren zu dessen Herstellung
US6777745B2 (en) * 2001-06-14 2004-08-17 General Semiconductor, Inc. Symmetric trench MOSFET device and method of making same
JP4865166B2 (ja) 2001-08-30 2012-02-01 新電元工業株式会社 トランジスタの製造方法、ダイオードの製造方法
US7323402B2 (en) 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
US6855593B2 (en) * 2002-07-11 2005-02-15 International Rectifier Corporation Trench Schottky barrier diode
US7316965B2 (en) * 2005-06-21 2008-01-08 Freescale Semiconductor, Inc. Substrate contact for a capped MEMS and method of making the substrate contact at the wafer level
US20060286706A1 (en) * 2005-06-21 2006-12-21 Salian Arvind S Method of making a substrate contact for a capped MEMS at the package level
JP2008078604A (ja) * 2006-08-24 2008-04-03 Rohm Co Ltd Ｍｉｓ型電界効果トランジスタおよびその製造方法
US8264047B2 (en) * 2010-05-10 2012-09-11 Infineon Technologies Austria Ag Semiconductor component with a trench edge termination
JP2013042117A (ja) * 2011-07-15 2013-02-28 Semiconductor Energy Lab Co Ltd 半導体装置
CN103337523B (zh) * 2013-06-19 2016-03-02 张家港凯思半导体有限公司 一种斜沟槽超势垒整流器件及其制造方法
US10134839B2 (en) * 2015-05-08 2018-11-20 Raytheon Company Field effect transistor structure having notched mesa

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1301702A (ja) * 1969-01-27 1973-01-04
US4092660A (en) * 1974-09-16 1978-05-30 Texas Instruments Incorporated High power field effect transistor
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELETRONIC DESIGN=1977US *
IBM TECHNICAL DISCLOSURE BULLETIN=1971US *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169370A (en) * 1980-04-30 1981-12-26 Siemens Ag Mis semiconductor device and method of producing same
JPS56165360A (en) * 1980-05-23 1981-12-18 Matsushita Electronics Corp Manufacture of semiconductor device
JPS5752170A (en) * 1980-07-21 1982-03-27 Siliconix Inc Power transistor
JPS5868044U (ja) * 1981-10-30 1983-05-09 日産自動車株式会社 Ｍｏｓ半導体装置
JPS598374A (ja) * 1982-07-05 1984-01-17 Matsushita Electronics Corp 縦型構造電界効果トランジスタの製造方法
JPH0481345B2 (ja) * 1982-07-05 1992-12-22 Matsushita Electronics Corp
JPS6393144A (ja) * 1986-05-19 1988-04-23 テキサス　インスツルメンツ　インコ−ポレイテツド エピタキシャル累層のトランジスタ構造及びその製造方法

Also Published As

Publication number Publication date
US4219835A (en) 1980-08-26
FR2417855A1 (fr) 1979-09-14
DE2904769C2 (de) 1984-04-05
DE2904769A1 (de) 1979-08-23
GB2014787A (en) 1979-08-30
FR2417855B1 (ja) 1982-06-11
GB2014787B (en) 1982-04-28

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