JPS5580356A - Planar type charge coupled device and method of fabricating same - Google Patents
Planar type charge coupled device and method of fabricating sameInfo
- Publication number
- JPS5580356A JPS5580356A JP15694179A JP15694179A JPS5580356A JP S5580356 A JPS5580356 A JP S5580356A JP 15694179 A JP15694179 A JP 15694179A JP 15694179 A JP15694179 A JP 15694179A JP S5580356 A JPS5580356 A JP S5580356A
- Authority
- JP
- Japan
- Prior art keywords
- coupled device
- charge coupled
- type charge
- planar type
- fabricating same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96693978A | 1978-12-05 | 1978-12-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5580356A true JPS5580356A (en) | 1980-06-17 |
JPS5629390B2 JPS5629390B2 (en) | 1981-07-08 |
Family
ID=25512089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15694179A Granted JPS5580356A (en) | 1978-12-05 | 1979-12-05 | Planar type charge coupled device and method of fabricating same |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5580356A (en) |
GB (1) | GB2037486B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61128568A (en) * | 1984-11-27 | 1986-06-16 | Yokogawa Electric Corp | Charge transfer device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7271489B2 (en) | 2003-10-15 | 2007-09-18 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
-
1979
- 1979-12-04 GB GB7941761A patent/GB2037486B/en not_active Expired
- 1979-12-05 JP JP15694179A patent/JPS5580356A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61128568A (en) * | 1984-11-27 | 1986-06-16 | Yokogawa Electric Corp | Charge transfer device |
Also Published As
Publication number | Publication date |
---|---|
GB2037486A (en) | 1980-07-09 |
JPS5629390B2 (en) | 1981-07-08 |
GB2037486B (en) | 1983-04-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55160476A (en) | Phtovoltaic device and method of fabricating same | |
JPS55108752A (en) | Semiconductor device and method of fabricating same | |
GB2022318B (en) | Schottky device and method of manufacture | |
JPS5543788A (en) | Button battery enclosure and method of fabricating same | |
JPS554994A (en) | Solar battery and method of manufacturing same | |
JPS5567172A (en) | Method of fabricating semiconductor and semiconductor device | |
JPS55159507A (en) | Electric device and method of manufacturing same | |
JPS5549860A (en) | Battery and method of manufacturing same | |
JPS54125987A (en) | Vmos metha structure and method of fabricating same | |
JPS54158896A (en) | Piezooelectric device and method of fabricating same | |
JPS54158891A (en) | Sheettlike photocell array and method of fabricating same | |
JPS54158881A (en) | Field effect device and method of fabricating same | |
JPS54158190A (en) | Semiconductor device and method of fabricating same | |
JPS558100A (en) | Method of manufacturing charge coupled device | |
JPS5516392A (en) | Channel plate structure and method of manufacturing same | |
JPS54145487A (en) | Method of fabricating circuit structure and circuit structure | |
JPS5696459A (en) | Battery and method of manufacturing same | |
JPS5496381A (en) | Charge coupling device and method of fabricating same | |
JPS5471584A (en) | Charge coupled device and method of fabricating same | |
JPS54132730A (en) | Lithiummiodine cell and method of producing same | |
JPS54136281A (en) | Semiconductor device and method of fabricating same | |
JPS54146950A (en) | Hottcathode material and method of fabricating same | |
JPS54121685A (en) | Ic and method of fabricating same | |
DE2962036D1 (en) | Charge coupled memory and method of manufacturing it | |
JPS54140872A (en) | Semiconductor device and method of fabricating same |