JPS54125967A - Crystal growth method - Google Patents

Crystal growth method

Info

Publication number
JPS54125967A
JPS54125967A JP3386978A JP3386978A JPS54125967A JP S54125967 A JPS54125967 A JP S54125967A JP 3386978 A JP3386978 A JP 3386978A JP 3386978 A JP3386978 A JP 3386978A JP S54125967 A JPS54125967 A JP S54125967A
Authority
JP
Japan
Prior art keywords
substrate
molecular beam
molecule
heat conductive
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3386978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6225249B2 (enrdf_load_stackoverflow
Inventor
Seiichi Nagata
Tsuneo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3386978A priority Critical patent/JPS54125967A/ja
Publication of JPS54125967A publication Critical patent/JPS54125967A/ja
Publication of JPS6225249B2 publication Critical patent/JPS6225249B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Led Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP3386978A 1978-03-23 1978-03-23 Crystal growth method Granted JPS54125967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3386978A JPS54125967A (en) 1978-03-23 1978-03-23 Crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3386978A JPS54125967A (en) 1978-03-23 1978-03-23 Crystal growth method

Publications (2)

Publication Number Publication Date
JPS54125967A true JPS54125967A (en) 1979-09-29
JPS6225249B2 JPS6225249B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=12398507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3386978A Granted JPS54125967A (en) 1978-03-23 1978-03-23 Crystal growth method

Country Status (1)

Country Link
JP (1) JPS54125967A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057937A (ja) * 1983-09-09 1985-04-03 Ushio Inc 紫外線洗浄方法
JPS6258613A (ja) * 1985-09-09 1987-03-14 Sumitomo Electric Ind Ltd 薄膜成長方法
JPS6260218A (ja) * 1985-09-10 1987-03-16 Sumitomo Electric Ind Ltd 薄膜成長方法
JPS62159432A (ja) * 1986-01-08 1987-07-15 Matsushita Electric Ind Co Ltd ドライエツチング方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057937A (ja) * 1983-09-09 1985-04-03 Ushio Inc 紫外線洗浄方法
JPS6258613A (ja) * 1985-09-09 1987-03-14 Sumitomo Electric Ind Ltd 薄膜成長方法
JPS6260218A (ja) * 1985-09-10 1987-03-16 Sumitomo Electric Ind Ltd 薄膜成長方法
JPS62159432A (ja) * 1986-01-08 1987-07-15 Matsushita Electric Ind Co Ltd ドライエツチング方法

Also Published As

Publication number Publication date
JPS6225249B2 (enrdf_load_stackoverflow) 1987-06-02

Similar Documents

Publication Publication Date Title
KR930022602A (ko) 박막형성법
GB1602038A (en) Method for manufacturing a layer of amorphous silicon usable in an electronic device
Belas et al. Type conversion of p-(HgCd) Te using and Ar reactive ion etching
JPS54125967A (en) Crystal growth method
JP2780419B2 (ja) 不純物の導入装置及びその導入方法
JPS5694780A (en) Semiconductor device
JPS6421973A (en) Device for manufacturing superconductive material
JPS5756036A (en) Plasma chemical vapor phase reactor
JPS57202729A (en) Manufacture of semiconductor device
JPS6459807A (en) Material for thin-film transistor
JPS53110378A (en) Plasma carrying device
JPS5660021A (en) Etching for semiconductor device
JPS5538933A (en) Detachable electrode for vacuum deposition device and ga-cu alloy for said electrode
DE3683521D1 (de) Thermisches aetzen eines verbindungshalbleiters.
EP0056737A3 (en) Method of manufacturing a semiconductor device using molecular beam epitaxy
JPS6423538A (en) Method and equipment for manufacturing semiconductor device
Tamura et al. Growth of crystalline GaAs films on Si substrates by Ga and As ion beams
JPS5730337A (en) Formation of surface protecting film for semiconductor
JPS5643735A (en) Manufacture of semiconductor device
JPS5784168A (en) Semiconductor device
KR890008933A (ko) 반도체 집적회로소자의 패턴의 레지스트층의 사용에 의한 정밀패턴 형성방법
JPS5516460A (en) Crystal growing method
GB1001308A (en) Method and apparatus for producing crystalline structures
JPS5534438A (en) Ion injection method
JPS5694779A (en) Semiconductor device