JPS54120589A - Semiconductor radiant-ray detector of multichannel type - Google Patents

Semiconductor radiant-ray detector of multichannel type

Info

Publication number
JPS54120589A
JPS54120589A JP2806678A JP2806678A JPS54120589A JP S54120589 A JPS54120589 A JP S54120589A JP 2806678 A JP2806678 A JP 2806678A JP 2806678 A JP2806678 A JP 2806678A JP S54120589 A JPS54120589 A JP S54120589A
Authority
JP
Japan
Prior art keywords
housing
board
mount
detector
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2806678A
Other languages
Japanese (ja)
Other versions
JPS586910B2 (en
Inventor
Toru Sugita
Tetsuji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP53028066A priority Critical patent/JPS586910B2/en
Publication of JPS54120589A publication Critical patent/JPS54120589A/en
Publication of JPS586910B2 publication Critical patent/JPS586910B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a highly-stable and highly-reliable radiatray detector by prevent ing recting characteristics from deteriorating by completely enclosing the detection element with an insulating mount. CONSTITUTION:The X-ray incident surface of Si detection element 21 which rectification junction 23 is covered and insulating guide 26 which is absorbing a few X rays is provided to insulating mount 25. Metal shielding board 27 adhered to the element reverse surface and its width is made narrower than mount 25 to insulate the board from metal housing 36. A notch abd holes 28 to 31 are provided to the corner for simplifying the operation. The board confronting to element 21 is provided with a hole smaller than the element area to adhere earth electrode layer 32, and one part is elongated to form connection part 33. On the element surface, output electrode layer 34 and connection part 35 are made. This unit is cionained in the housing, where connectors 37 and 38 at the bottom are made in contact with connection parte 34 and 35 and then led out to extermal sence radiator 40. In this costitution, the element is fhield from the air and will not deteriorate under no influence of noises. In addition, since it can be installed in the housing without effort, no strain occurs to the detector, so that the device will be high in stability a nd in reliability.
JP53028066A 1978-03-11 1978-03-11 Multichannel semiconductor radiation detector Expired JPS586910B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53028066A JPS586910B2 (en) 1978-03-11 1978-03-11 Multichannel semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53028066A JPS586910B2 (en) 1978-03-11 1978-03-11 Multichannel semiconductor radiation detector

Publications (2)

Publication Number Publication Date
JPS54120589A true JPS54120589A (en) 1979-09-19
JPS586910B2 JPS586910B2 (en) 1983-02-07

Family

ID=12238382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53028066A Expired JPS586910B2 (en) 1978-03-11 1978-03-11 Multichannel semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS586910B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168980A (en) * 1982-03-31 1983-10-05 Toshiba Corp radiation detector
JPS5917185A (en) * 1982-07-21 1984-01-28 Toshiba Corp Radiation detector
US8044361B2 (en) 2005-12-08 2011-10-25 Sumitomo Heavy Industries, Ltd. Radiation detection unit and radiographic inspection apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168980A (en) * 1982-03-31 1983-10-05 Toshiba Corp radiation detector
US4571494A (en) * 1982-03-31 1986-02-18 Tokyo Shibaura Denki Kabushiki Kaisha Multi-channel radiation detector array
JPS5917185A (en) * 1982-07-21 1984-01-28 Toshiba Corp Radiation detector
US8044361B2 (en) 2005-12-08 2011-10-25 Sumitomo Heavy Industries, Ltd. Radiation detection unit and radiographic inspection apparatus

Also Published As

Publication number Publication date
JPS586910B2 (en) 1983-02-07

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