JPS54118776A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS54118776A
JPS54118776A JP2547278A JP2547278A JPS54118776A JP S54118776 A JPS54118776 A JP S54118776A JP 2547278 A JP2547278 A JP 2547278A JP 2547278 A JP2547278 A JP 2547278A JP S54118776 A JPS54118776 A JP S54118776A
Authority
JP
Japan
Prior art keywords
bridging
micropattern
methyl methacrylate
polymer
equi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2547278A
Other languages
Japanese (ja)
Other versions
JPS5731125B2 (en
Inventor
Toshisuke Kitakoji
Yasuhiro Yoneda
Tateo Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2547278A priority Critical patent/JPS54118776A/en
Publication of JPS54118776A publication Critical patent/JPS54118776A/en
Publication of JPS5731125B2 publication Critical patent/JPS5731125B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

PURPOSE: To produce a micropattern by providing the positive resist layer composed of a kind of the bridging methacrylic resin and having the exposure and development after process under the temperature less than the bridging temperature to perform bridging.
CONSTITUTION: The equi-molar polymer of methyl methacrylate and methacryloyl chloride plus the equi-molar polymer of methyl methacrylate and methacrylic acid are dissolved into the Cellosolve acetate. And these polymers are mixed together in the same quantity and then coated to the oxide film on the subsrate to undergo a 15-minute process in N2 and at 80°C to form the gel film. A high Sensitivity is obtained to the radiant rays since the polymer is not hardened. Then the electron beam is irradiated with the quantity of 1/10 conventional PMMA (poly methyl methacrylate). The substrate is then soaked three minutes into the water solution of ethyl alcohol and then dried to obtain a micropattern. Then the heat bridging is given after the 15-minute process at 180°C. The bridged and hardened resin features the 3-dimensional mesh structure, and the etching speed is reduced down 1/5 PMMA at the CF4 plasma etching. Thus, a micropattern can be obtained with a high heat resistance.
COPYRIGHT: (C)1979,JPO&Japio
JP2547278A 1978-03-08 1978-03-08 Pattern forming method Granted JPS54118776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2547278A JPS54118776A (en) 1978-03-08 1978-03-08 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2547278A JPS54118776A (en) 1978-03-08 1978-03-08 Pattern forming method

Publications (2)

Publication Number Publication Date
JPS54118776A true JPS54118776A (en) 1979-09-14
JPS5731125B2 JPS5731125B2 (en) 1982-07-02

Family

ID=12166972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2547278A Granted JPS54118776A (en) 1978-03-08 1978-03-08 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS54118776A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855214A (en) * 1986-09-01 1989-08-08 Sanyo Electric Co., Ltd. Radiation-sensitive high-polymeric material

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49103632A (en) * 1972-12-21 1974-10-01 Philips Nv
JPS511971A (en) * 1974-06-25 1976-01-09 Meidensha Electric Mfg Co Ltd Kaiheikino sosasochi
JPS51105353A (en) * 1975-03-07 1976-09-17 Hitachi Ltd DENSHISENKANNOSEIKOBUNSHISOSEIBUTSU
JPS5218097A (en) * 1975-07-31 1977-02-10 Matsushita Electric Works Ltd Sprinkler
JPS52153672A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Electron beam resist and its usage
JPS5499621A (en) * 1977-12-24 1979-08-06 Licentia Gmbh Radiant ray sensitive material having positive operation

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49103632A (en) * 1972-12-21 1974-10-01 Philips Nv
JPS511971A (en) * 1974-06-25 1976-01-09 Meidensha Electric Mfg Co Ltd Kaiheikino sosasochi
JPS51105353A (en) * 1975-03-07 1976-09-17 Hitachi Ltd DENSHISENKANNOSEIKOBUNSHISOSEIBUTSU
JPS5218097A (en) * 1975-07-31 1977-02-10 Matsushita Electric Works Ltd Sprinkler
JPS52153672A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Electron beam resist and its usage
JPS5499621A (en) * 1977-12-24 1979-08-06 Licentia Gmbh Radiant ray sensitive material having positive operation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855214A (en) * 1986-09-01 1989-08-08 Sanyo Electric Co., Ltd. Radiation-sensitive high-polymeric material

Also Published As

Publication number Publication date
JPS5731125B2 (en) 1982-07-02

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