JPS54111781A - Transistor - Google Patents

Transistor

Info

Publication number
JPS54111781A
JPS54111781A JP1845078A JP1845078A JPS54111781A JP S54111781 A JPS54111781 A JP S54111781A JP 1845078 A JP1845078 A JP 1845078A JP 1845078 A JP1845078 A JP 1845078A JP S54111781 A JPS54111781 A JP S54111781A
Authority
JP
Japan
Prior art keywords
emitter
layer
base
type
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1845078A
Other languages
Japanese (ja)
Inventor
Hisashi Toki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1845078A priority Critical patent/JPS54111781A/en
Publication of JPS54111781A publication Critical patent/JPS54111781A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To prevent current concentration without lowering the high frequency performance, by providing the ring insulation layer having the depth not reaching the emitter and base junction around the electrode of emitter layer.
CONSTITUTION: The p type base 2, n' emitter 3 are provided with the n type Si substrate 1, and the ring groove 4 is placed around the emitter electrode forming region 5. The transversal resistance r is increased lower the groove 4 being the ballast resistance. It is very effective by producing the edge clouding phenomenon at greater current operation, and increased resistor r'bb is not caused to the base side and no cut off frequency is lowered. SiO2 layer can be used in place of grooves.
COPYRIGHT: (C)1979,JPO&Japio
JP1845078A 1978-02-22 1978-02-22 Transistor Pending JPS54111781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1845078A JPS54111781A (en) 1978-02-22 1978-02-22 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1845078A JPS54111781A (en) 1978-02-22 1978-02-22 Transistor

Publications (1)

Publication Number Publication Date
JPS54111781A true JPS54111781A (en) 1979-09-01

Family

ID=11971952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1845078A Pending JPS54111781A (en) 1978-02-22 1978-02-22 Transistor

Country Status (1)

Country Link
JP (1) JPS54111781A (en)

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