JPS54106167A - Dope agent for semiconductor substrate - Google Patents

Dope agent for semiconductor substrate

Info

Publication number
JPS54106167A
JPS54106167A JP1298578A JP1298578A JPS54106167A JP S54106167 A JPS54106167 A JP S54106167A JP 1298578 A JP1298578 A JP 1298578A JP 1298578 A JP1298578 A JP 1298578A JP S54106167 A JPS54106167 A JP S54106167A
Authority
JP
Japan
Prior art keywords
solution
semiconductor substrate
dope
dope agent
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1298578A
Other languages
Japanese (ja)
Inventor
Okimitsu Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1298578A priority Critical patent/JPS54106167A/en
Publication of JPS54106167A publication Critical patent/JPS54106167A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To dope the platnum to the substrate by using the alcohol solution of silicon tetrahydroxide containing the aqueous solution of the chloroplatinic acid.
CONSTITUTION: The solution can be dissolved with ethanol of Si(OH)4 and thus dissolved with the aqueous solution of H2PtCl6.6H2O. This solution varies as Si(OH)4→ SiO2 + H2O at the normal temperature or higher temperature to form the SiO2 film. With this dope agent, Pt can be diffused in a desired amount with the extremely high reproducibility. Then the solution is applied and then heated up in the inactive gas.
COPYRIGHT: (C)1979,JPO&Japio
JP1298578A 1978-02-09 1978-02-09 Dope agent for semiconductor substrate Pending JPS54106167A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1298578A JPS54106167A (en) 1978-02-09 1978-02-09 Dope agent for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1298578A JPS54106167A (en) 1978-02-09 1978-02-09 Dope agent for semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS54106167A true JPS54106167A (en) 1979-08-20

Family

ID=11820488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1298578A Pending JPS54106167A (en) 1978-02-09 1978-02-09 Dope agent for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS54106167A (en)

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