JPS54104489A - Method and apparatus for growing thin film - Google Patents
Method and apparatus for growing thin filmInfo
- Publication number
- JPS54104489A JPS54104489A JP1168278A JP1168278A JPS54104489A JP S54104489 A JPS54104489 A JP S54104489A JP 1168278 A JP1168278 A JP 1168278A JP 1168278 A JP1168278 A JP 1168278A JP S54104489 A JPS54104489 A JP S54104489A
- Authority
- JP
- Japan
- Prior art keywords
- group
- vacuum
- thin film
- substance
- molecules
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000000126 substance Substances 0.000 abstract 6
- 238000011109 contamination Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1168278A JPS54104489A (en) | 1978-02-03 | 1978-02-03 | Method and apparatus for growing thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1168278A JPS54104489A (en) | 1978-02-03 | 1978-02-03 | Method and apparatus for growing thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54104489A true JPS54104489A (en) | 1979-08-16 |
JPS6120513B2 JPS6120513B2 (forum.php) | 1986-05-22 |
Family
ID=11784767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1168278A Granted JPS54104489A (en) | 1978-02-03 | 1978-02-03 | Method and apparatus for growing thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54104489A (forum.php) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0225512U (forum.php) * | 1988-08-02 | 1990-02-20 | ||
JPH0413612U (forum.php) * | 1990-05-25 | 1992-02-04 |
-
1978
- 1978-02-03 JP JP1168278A patent/JPS54104489A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6120513B2 (forum.php) | 1986-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6453411A (en) | Manufacture of semiconductor thin film | |
JPS54104489A (en) | Method and apparatus for growing thin film | |
JPS52115185A (en) | Vapor phase growing apparatus | |
JPS5380965A (en) | Liquid-phase growth method | |
JPS5742598A (en) | Liquid-phase epitaxial growing method | |
JPS54104772A (en) | Thin film growth method and its unit | |
JPS54128990A (en) | Growing method for single crystal of gallium phosphide | |
JPS5618000A (en) | Vapor phase growing method for 3-5 group compound semiconductor | |
JPS5694730A (en) | Preparation method of compound semiconductor thin film | |
JPS55107227A (en) | Device for growing of semiconductor in vapor phase | |
ATE80498T1 (de) | Materialsparendes verfahren zur herstellung von mischkristallen. | |
JPS52149080A (en) | Crystal thin film of compound semiconductor | |
JPS61261294A (ja) | 分子線エピタキシャル成長法 | |
JPS5591119A (en) | Vapour growth method | |
JPS54102867A (en) | Gaas epitaxial vapor phase growth method | |
JPS544567A (en) | Growing apparatus of ion beam crystal | |
JPS54151373A (en) | Gas phase growth method | |
JPS5394871A (en) | Vapor growth method for gaas substrate | |
JPS542660A (en) | Liquid-phase epitaxial growth method of compound semiconductor | |
JPS5443186A (en) | Liquid phase epitaxial growth method | |
JPS54126695A (en) | Forming method for vapor phase grown film | |
JPS5387985A (en) | Gaseous phase epitaxial growth method for compound semiconductor crystal | |
JPS55117231A (en) | Growing method of crystal | |
JPS59137395A (ja) | InP薄膜の製造方法 | |
JPS5356197A (en) | Gas phase growing method of ultraphosphate |