JPS5381A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5381A
JPS5381A JP7483476A JP7483476A JPS5381A JP S5381 A JPS5381 A JP S5381A JP 7483476 A JP7483476 A JP 7483476A JP 7483476 A JP7483476 A JP 7483476A JP S5381 A JPS5381 A JP S5381A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
submicron
mosfet
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7483476A
Other languages
Japanese (ja)
Inventor
Masashi Omori
Isao Okura
Yutaka Torii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7483476A priority Critical patent/JPS5381A/en
Publication of JPS5381A publication Critical patent/JPS5381A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a MOSFET which features a channel length of more or less submicron as well as a good reproducing performance for the threshold voltage level by forming a same conduction type region as the semiconductor substrate through an ion injection method touching the source region under the gate insulation film.
COPYRIGHT: (C)1978,JPO&Japio
JP7483476A 1976-06-23 1976-06-23 Manufacture of semiconductor device Pending JPS5381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7483476A JPS5381A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7483476A JPS5381A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5381A true JPS5381A (en) 1978-01-05

Family

ID=13558753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7483476A Pending JPS5381A (en) 1976-06-23 1976-06-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5381A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242754A (en) * 2006-03-07 2007-09-20 Oki Electric Ind Co Ltd Semiconductor device and manufacturing method therefor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114275A (en) * 1974-07-25 1976-02-04 Fujitsu Ltd Handotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5114275A (en) * 1974-07-25 1976-02-04 Fujitsu Ltd Handotaisochino seizohoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242754A (en) * 2006-03-07 2007-09-20 Oki Electric Ind Co Ltd Semiconductor device and manufacturing method therefor

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