JPS5380964A - Forming process of substrate for integrated circuit - Google Patents
Forming process of substrate for integrated circuitInfo
- Publication number
- JPS5380964A JPS5380964A JP15644476A JP15644476A JPS5380964A JP S5380964 A JPS5380964 A JP S5380964A JP 15644476 A JP15644476 A JP 15644476A JP 15644476 A JP15644476 A JP 15644476A JP S5380964 A JPS5380964 A JP S5380964A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- integrated circuit
- forming process
- performance
- highresistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To produce a MOSIC substrate featuring a good reproducing performance as well as excellent characteristics, by providing an active layer through ion injection into the highresistance Si substrate and carrying out an annealing through HCl oxidation under a high temperature in order to restore the crystallization performance.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15644476A JPS5380964A (en) | 1976-12-27 | 1976-12-27 | Forming process of substrate for integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15644476A JPS5380964A (en) | 1976-12-27 | 1976-12-27 | Forming process of substrate for integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5380964A true JPS5380964A (en) | 1978-07-17 |
JPS552732B2 JPS552732B2 (en) | 1980-01-22 |
Family
ID=15627873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15644476A Granted JPS5380964A (en) | 1976-12-27 | 1976-12-27 | Forming process of substrate for integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5380964A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5826167Y2 (en) * | 1979-06-11 | 1983-06-06 | 株式会社ブリヂストン | Assembly type wheel |
-
1976
- 1976-12-27 JP JP15644476A patent/JPS5380964A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS552732B2 (en) | 1980-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5269587A (en) | Device and manufacture for high voltage resisting semiconductor | |
JPS5395571A (en) | Semiconductor device | |
JPS5331964A (en) | Production of semiconductor substrates | |
JPS5380964A (en) | Forming process of substrate for integrated circuit | |
JPS53128285A (en) | Semiconductor device and production of the same | |
JPS542070A (en) | Manufacture for semiconductor element | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS5368182A (en) | Production of semiconductor memory device | |
JPS5338274A (en) | Lc compound circuit | |
JPS5228879A (en) | Semiconductor device and method for its production | |
JPS51118391A (en) | Manufacturing process for semiconducter unit | |
JPS5368165A (en) | Production of semiconductor device | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS5240061A (en) | Semiconductor device and process for production of same | |
JPS51112266A (en) | Semiconductor device production method | |
JPS5248467A (en) | Process for production of semiconductor device | |
JPS53142168A (en) | Reproductive use of semiconductor substrate | |
JPS5363866A (en) | Production of semiconductor device | |
JPS52179A (en) | Method of fabricating semiconductor | |
JPS5244165A (en) | Process for production of semiconductor device | |
JPS5422765A (en) | Manufacture of semiconductor device | |
JPS538082A (en) | Production of semiconductor device | |
JPS5398788A (en) | Manufacture for semiconductor integrated circuit | |
JPS5329662A (en) | Production of semiconductor device | |
JPS538083A (en) | Production of semiconductor device |