JPS5372429A - Non-volatile semiconductor memory unit - Google Patents

Non-volatile semiconductor memory unit

Info

Publication number
JPS5372429A
JPS5372429A JP14798276A JP14798276A JPS5372429A JP S5372429 A JPS5372429 A JP S5372429A JP 14798276 A JP14798276 A JP 14798276A JP 14798276 A JP14798276 A JP 14798276A JP S5372429 A JPS5372429 A JP S5372429A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory unit
volatile semiconductor
bistable circuit
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14798276A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5723354B2 (https=
Inventor
Shozo Saito
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14798276A priority Critical patent/JPS5372429A/ja
Priority to GB5053377A priority patent/GB1544314A/en
Priority to DE19772754987 priority patent/DE2754987C2/de
Publication of JPS5372429A publication Critical patent/JPS5372429A/ja
Publication of JPS5723354B2 publication Critical patent/JPS5723354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP14798276A 1976-12-09 1976-12-09 Non-volatile semiconductor memory unit Granted JPS5372429A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP14798276A JPS5372429A (en) 1976-12-09 1976-12-09 Non-volatile semiconductor memory unit
GB5053377A GB1544314A (en) 1976-12-09 1977-12-05 Non-volatile semiconductor memory device
DE19772754987 DE2754987C2 (de) 1976-12-09 1977-12-09 Halbleiter-Speichervorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14798276A JPS5372429A (en) 1976-12-09 1976-12-09 Non-volatile semiconductor memory unit

Publications (2)

Publication Number Publication Date
JPS5372429A true JPS5372429A (en) 1978-06-27
JPS5723354B2 JPS5723354B2 (https=) 1982-05-18

Family

ID=15442485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14798276A Granted JPS5372429A (en) 1976-12-09 1976-12-09 Non-volatile semiconductor memory unit

Country Status (3)

Country Link
JP (1) JPS5372429A (https=)
DE (1) DE2754987C2 (https=)
GB (1) GB1544314A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111174A (en) * 1979-02-21 1980-08-27 Nec Corp Nonvolatile semiconductor memory device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56500109A (https=) * 1979-03-13 1981-02-05
US4271487A (en) * 1979-11-13 1981-06-02 Ncr Corporation Static volatile/non-volatile ram cell
GB2171571B (en) * 1985-02-27 1989-06-14 Hughes Microelectronics Ltd Non-volatile memory with predictable failure modes and method of data storage and retrieval
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
DE3887924T3 (de) 1987-06-02 1999-08-12 National Semiconductor Corp., Santa Clara, Calif. Nichtflüchtige Speicheranordnung mit einem kapazitiven ferroelektrischen Speicherelement.
US4809225A (en) * 1987-07-02 1989-02-28 Ramtron Corporation Memory cell with volatile and non-volatile portions having ferroelectric capacitors
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US5434811A (en) * 1987-11-19 1995-07-18 National Semiconductor Corporation Non-destructive read ferroelectric based memory circuit
KR930015015A (ko) * 1991-12-20 1993-07-23 윌리엄 이. 힐러 강유전성 캐패시터를 갖는 메모리 셀
TW557569B (en) * 2000-01-24 2003-10-11 Sony Corp Semiconductor device and manufacturing method thereof
US7050323B2 (en) 2002-08-29 2006-05-23 Texas Instruments Incorporated Ferroelectric memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48103278A (https=) * 1972-04-13 1973-12-25
JPS50106534A (https=) * 1974-01-29 1975-08-22
JPS51142928A (en) * 1975-05-20 1976-12-08 Plessey Handel Investment Ag Electric information memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3662351A (en) * 1970-03-30 1972-05-09 Ibm Alterable-latent image monolithic memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48103278A (https=) * 1972-04-13 1973-12-25
JPS50106534A (https=) * 1974-01-29 1975-08-22
JPS51142928A (en) * 1975-05-20 1976-12-08 Plessey Handel Investment Ag Electric information memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111174A (en) * 1979-02-21 1980-08-27 Nec Corp Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
GB1544314A (en) 1979-04-19
DE2754987A1 (de) 1978-06-15
JPS5723354B2 (https=) 1982-05-18
DE2754987C2 (de) 1984-11-22

Similar Documents

Publication Publication Date Title
JPS5342633A (en) Voltage sense circuit of semiconductor memory device
JPS5619586A (en) Semiconductor memory unit
JPS52142936A (en) Semiconductor memory circuit
EP0111868A3 (en) A memory system for storing analog information
JPS5333076A (en) Production of mos type integrated circuit
JPS5372429A (en) Non-volatile semiconductor memory unit
JPS5625288A (en) Bit line control circuit
JPS54107278A (en) Semiconductor device
JPS52144240A (en) Amplifier circuit for reading dynamic mos memory
JPS5517869A (en) Semiconductor memory device
JPS5733493A (en) Semiconductor storage device
NL7701055A (nl) Condensatorgeheugen in geintegreerde halfgelei- derschakeling.
JPS5577088A (en) Nonvolatile semiconductor memory unit
JPS533747A (en) Self-refresh dynamic memory circuit
JPS54158828A (en) Dynamic type semiconductor memory device
JPS5427734A (en) Dynamic semiconductor memory
JPS5364434A (en) Sense circuit of mos semiconductor memory
JPS5211877A (en) Bootstrap circuit
JPS55101185A (en) Semiconductor memory device
JPS5634184A (en) Semiconductor memory
JPS52110531A (en) Memory unit
JPS51114883A (en) Mos variable capacitance element incorporated in ic
JPS51142930A (en) Semiconductor memory devices
JPS55160393A (en) Read voltage setting system for semiconductor memory
JPS5240987A (en) Integratd capacitance element