DE2754987C2 - Halbleiter-Speichervorrichtung - Google Patents

Halbleiter-Speichervorrichtung

Info

Publication number
DE2754987C2
DE2754987C2 DE19772754987 DE2754987A DE2754987C2 DE 2754987 C2 DE2754987 C2 DE 2754987C2 DE 19772754987 DE19772754987 DE 19772754987 DE 2754987 A DE2754987 A DE 2754987A DE 2754987 C2 DE2754987 C2 DE 2754987C2
Authority
DE
Germany
Prior art keywords
control signal
capacitor
binary
voltage
threshold voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19772754987
Other languages
German (de)
English (en)
Other versions
DE2754987A1 (de
Inventor
Shozo Yokohama Saito
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE2754987A1 publication Critical patent/DE2754987A1/de
Application granted granted Critical
Publication of DE2754987C2 publication Critical patent/DE2754987C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE19772754987 1976-12-09 1977-12-09 Halbleiter-Speichervorrichtung Expired DE2754987C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14798276A JPS5372429A (en) 1976-12-09 1976-12-09 Non-volatile semiconductor memory unit

Publications (2)

Publication Number Publication Date
DE2754987A1 DE2754987A1 (de) 1978-06-15
DE2754987C2 true DE2754987C2 (de) 1984-11-22

Family

ID=15442485

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772754987 Expired DE2754987C2 (de) 1976-12-09 1977-12-09 Halbleiter-Speichervorrichtung

Country Status (3)

Country Link
JP (1) JPS5372429A (https=)
DE (1) DE2754987C2 (https=)
GB (1) GB1544314A (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111174A (en) * 1979-02-21 1980-08-27 Nec Corp Nonvolatile semiconductor memory device
JPS56500109A (https=) * 1979-03-13 1981-02-05
US4271487A (en) * 1979-11-13 1981-06-02 Ncr Corporation Static volatile/non-volatile ram cell
GB2171571B (en) * 1985-02-27 1989-06-14 Hughes Microelectronics Ltd Non-volatile memory with predictable failure modes and method of data storage and retrieval
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
DE3887924T3 (de) 1987-06-02 1999-08-12 National Semiconductor Corp., Santa Clara, Calif. Nichtflüchtige Speicheranordnung mit einem kapazitiven ferroelektrischen Speicherelement.
US4809225A (en) * 1987-07-02 1989-02-28 Ramtron Corporation Memory cell with volatile and non-volatile portions having ferroelectric capacitors
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US5434811A (en) * 1987-11-19 1995-07-18 National Semiconductor Corporation Non-destructive read ferroelectric based memory circuit
KR930015015A (ko) * 1991-12-20 1993-07-23 윌리엄 이. 힐러 강유전성 캐패시터를 갖는 메모리 셀
TW557569B (en) * 2000-01-24 2003-10-11 Sony Corp Semiconductor device and manufacturing method thereof
US7050323B2 (en) 2002-08-29 2006-05-23 Texas Instruments Incorporated Ferroelectric memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3662351A (en) * 1970-03-30 1972-05-09 Ibm Alterable-latent image monolithic memory
JPS5213916B2 (https=) * 1972-04-13 1977-04-18
JPS5721796B2 (https=) * 1974-01-29 1982-05-10
GB1516134A (en) * 1975-05-20 1978-06-28 Plessey Co Ltd Electrical information store

Also Published As

Publication number Publication date
GB1544314A (en) 1979-04-19
DE2754987A1 (de) 1978-06-15
JPS5723354B2 (https=) 1982-05-18
JPS5372429A (en) 1978-06-27

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8128 New person/name/address of the agent

Representative=s name: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZ

D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee