JPS5368585A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5368585A
JPS5368585A JP14333976A JP14333976A JPS5368585A JP S5368585 A JPS5368585 A JP S5368585A JP 14333976 A JP14333976 A JP 14333976A JP 14333976 A JP14333976 A JP 14333976A JP S5368585 A JPS5368585 A JP S5368585A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
transistor
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14333976A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6124828B2 (enrdf_load_stackoverflow
Inventor
Tomoyuki Watabe
Takahiro Okabe
Kenji Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14333976A priority Critical patent/JPS5368585A/ja
Publication of JPS5368585A publication Critical patent/JPS5368585A/ja
Publication of JPS6124828B2 publication Critical patent/JPS6124828B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP14333976A 1976-12-01 1976-12-01 Semiconductor integrated circuit device Granted JPS5368585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14333976A JPS5368585A (en) 1976-12-01 1976-12-01 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14333976A JPS5368585A (en) 1976-12-01 1976-12-01 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5368585A true JPS5368585A (en) 1978-06-19
JPS6124828B2 JPS6124828B2 (enrdf_load_stackoverflow) 1986-06-12

Family

ID=15336477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14333976A Granted JPS5368585A (en) 1976-12-01 1976-12-01 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5368585A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160459A (en) * 1979-05-31 1980-12-13 Toshiba Corp Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160459A (en) * 1979-05-31 1980-12-13 Toshiba Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS6124828B2 (enrdf_load_stackoverflow) 1986-06-12

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