JPS5363824A - Semiconductor random access memory - Google Patents

Semiconductor random access memory

Info

Publication number
JPS5363824A
JPS5363824A JP13929776A JP13929776A JPS5363824A JP S5363824 A JPS5363824 A JP S5363824A JP 13929776 A JP13929776 A JP 13929776A JP 13929776 A JP13929776 A JP 13929776A JP S5363824 A JPS5363824 A JP S5363824A
Authority
JP
Japan
Prior art keywords
random access
access memory
semiconductor random
semiconductor
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13929776A
Other languages
English (en)
Japanese (ja)
Other versions
JPS564996B2 (OSRAM
Inventor
Michihiro Yamada
Koichi Nagasawa
Kazuyasu Fujishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13929776A priority Critical patent/JPS5363824A/ja
Publication of JPS5363824A publication Critical patent/JPS5363824A/ja
Publication of JPS564996B2 publication Critical patent/JPS564996B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
JP13929776A 1976-11-18 1976-11-18 Semiconductor random access memory Granted JPS5363824A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13929776A JPS5363824A (en) 1976-11-18 1976-11-18 Semiconductor random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13929776A JPS5363824A (en) 1976-11-18 1976-11-18 Semiconductor random access memory

Publications (2)

Publication Number Publication Date
JPS5363824A true JPS5363824A (en) 1978-06-07
JPS564996B2 JPS564996B2 (OSRAM) 1981-02-02

Family

ID=15241987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13929776A Granted JPS5363824A (en) 1976-11-18 1976-11-18 Semiconductor random access memory

Country Status (1)

Country Link
JP (1) JPS5363824A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152394A (ja) * 2002-10-30 2004-05-27 Renesas Technology Corp 半導体記憶装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52116120A (en) * 1976-03-26 1977-09-29 Hitachi Ltd Memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52116120A (en) * 1976-03-26 1977-09-29 Hitachi Ltd Memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152394A (ja) * 2002-10-30 2004-05-27 Renesas Technology Corp 半導体記憶装置

Also Published As

Publication number Publication date
JPS564996B2 (OSRAM) 1981-02-02

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