JPS5362489A - Production of semiconductor laser - Google Patents

Production of semiconductor laser

Info

Publication number
JPS5362489A
JPS5362489A JP13821076A JP13821076A JPS5362489A JP S5362489 A JPS5362489 A JP S5362489A JP 13821076 A JP13821076 A JP 13821076A JP 13821076 A JP13821076 A JP 13821076A JP S5362489 A JPS5362489 A JP S5362489A
Authority
JP
Japan
Prior art keywords
production
semiconductor laser
grooves
cleaving
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13821076A
Other languages
English (en)
Inventor
Etsuji Omura
Kenji Ikeda
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13821076A priority Critical patent/JPS5362489A/ja
Publication of JPS5362489A publication Critical patent/JPS5362489A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP13821076A 1976-11-16 1976-11-16 Production of semiconductor laser Pending JPS5362489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13821076A JPS5362489A (en) 1976-11-16 1976-11-16 Production of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13821076A JPS5362489A (en) 1976-11-16 1976-11-16 Production of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5362489A true JPS5362489A (en) 1978-06-03

Family

ID=15216646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13821076A Pending JPS5362489A (en) 1976-11-16 1976-11-16 Production of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5362489A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687390A (en) * 1979-12-19 1981-07-15 Hitachi Ltd Semiconductor laser
JPS61128587A (ja) * 1984-11-27 1986-06-16 Sony Corp 半導体レーザとその製造方法
JPS62113490A (ja) * 1985-11-13 1987-05-25 Sanyo Electric Co Ltd 半導体レ−ザの製造方法
JPH04262589A (ja) * 1991-02-15 1992-09-17 Nec Kagoshima Ltd 光半導体装置の製造方法
JP2002335030A (ja) * 2001-05-10 2002-11-22 Sony Corp 半導体レーザ装置及びその製造方法
JP2003218471A (ja) * 1993-11-22 2003-07-31 Xerox Corp レーザダイオード生成方法
US7183136B2 (en) 2002-06-24 2007-02-27 Toyoda Gosei Co., Ltd. Semiconductor element and method for producing the same
JP2008532279A (ja) * 2005-02-25 2008-08-14 エルエス ケーブル リミテッド 熱放出構造が改善されたレーザーダイオード及びその製造方法
WO2019186888A1 (ja) * 2018-03-29 2019-10-03 三菱電機株式会社 半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270781A (en) * 1975-11-12 1977-06-13 Nec Corp Manufacture of semiconductor laser crystal piece

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270781A (en) * 1975-11-12 1977-06-13 Nec Corp Manufacture of semiconductor laser crystal piece

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5687390A (en) * 1979-12-19 1981-07-15 Hitachi Ltd Semiconductor laser
JPS61128587A (ja) * 1984-11-27 1986-06-16 Sony Corp 半導体レーザとその製造方法
JPS62113490A (ja) * 1985-11-13 1987-05-25 Sanyo Electric Co Ltd 半導体レ−ザの製造方法
JPH04262589A (ja) * 1991-02-15 1992-09-17 Nec Kagoshima Ltd 光半導体装置の製造方法
JP2003218471A (ja) * 1993-11-22 2003-07-31 Xerox Corp レーザダイオード生成方法
JP2002335030A (ja) * 2001-05-10 2002-11-22 Sony Corp 半導体レーザ装置及びその製造方法
US7183136B2 (en) 2002-06-24 2007-02-27 Toyoda Gosei Co., Ltd. Semiconductor element and method for producing the same
JP2008532279A (ja) * 2005-02-25 2008-08-14 エルエス ケーブル リミテッド 熱放出構造が改善されたレーザーダイオード及びその製造方法
WO2019186888A1 (ja) * 2018-03-29 2019-10-03 三菱電機株式会社 半導体装置の製造方法

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