JPS5342675A - Single crystal device and its production - Google Patents
Single crystal device and its productionInfo
- Publication number
- JPS5342675A JPS5342675A JP11812676A JP11812676A JPS5342675A JP S5342675 A JPS5342675 A JP S5342675A JP 11812676 A JP11812676 A JP 11812676A JP 11812676 A JP11812676 A JP 11812676A JP S5342675 A JPS5342675 A JP S5342675A
- Authority
- JP
- Japan
- Prior art keywords
- production
- single crystal
- crystal device
- submicrons
- masks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11812676A JPS5342675A (en) | 1976-09-30 | 1976-09-30 | Single crystal device and its production |
| US05/815,303 US4171234A (en) | 1976-07-20 | 1977-07-13 | Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles |
| GB29739/77A GB1589455A (en) | 1976-07-20 | 1977-07-15 | Crystals and the manufacture thereof |
| DE2732807A DE2732807C2 (de) | 1976-07-20 | 1977-07-20 | Verfahren zur Herstellung eines Halbleiter-Bauelementes mit einer Einkristallstruktur |
| FR7722251A FR2358921A1 (fr) | 1976-07-20 | 1977-07-20 | Dispositif a monocristal et procede pour sa fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11812676A JPS5342675A (en) | 1976-09-30 | 1976-09-30 | Single crystal device and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5342675A true JPS5342675A (en) | 1978-04-18 |
| JPS5625015B2 JPS5625015B2 (OSRAM) | 1981-06-10 |
Family
ID=14728671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11812676A Granted JPS5342675A (en) | 1976-07-20 | 1976-09-30 | Single crystal device and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5342675A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55153322A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Molecular beam epitaxial growth |
| JPH01235324A (ja) * | 1988-03-16 | 1989-09-20 | Hikari Gijutsu Kenkyu Kaihatsu Kk | 化合物半導体薄膜結晶の成長方法 |
-
1976
- 1976-09-30 JP JP11812676A patent/JPS5342675A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55153322A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Molecular beam epitaxial growth |
| JPH01235324A (ja) * | 1988-03-16 | 1989-09-20 | Hikari Gijutsu Kenkyu Kaihatsu Kk | 化合物半導体薄膜結晶の成長方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5625015B2 (OSRAM) | 1981-06-10 |
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