JPS5625015B2 - - Google Patents

Info

Publication number
JPS5625015B2
JPS5625015B2 JP11812676A JP11812676A JPS5625015B2 JP S5625015 B2 JPS5625015 B2 JP S5625015B2 JP 11812676 A JP11812676 A JP 11812676A JP 11812676 A JP11812676 A JP 11812676A JP S5625015 B2 JPS5625015 B2 JP S5625015B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11812676A
Other languages
Japanese (ja)
Other versions
JPS5342675A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11812676A priority Critical patent/JPS5342675A/ja
Priority to US05/815,303 priority patent/US4171234A/en
Priority to GB29739/77A priority patent/GB1589455A/en
Priority to FR7722251A priority patent/FR2358921A1/fr
Priority to DE2732807A priority patent/DE2732807C2/de
Publication of JPS5342675A publication Critical patent/JPS5342675A/ja
Publication of JPS5625015B2 publication Critical patent/JPS5625015B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP11812676A 1976-07-20 1976-09-30 Single crystal device and its production Granted JPS5342675A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11812676A JPS5342675A (en) 1976-09-30 1976-09-30 Single crystal device and its production
US05/815,303 US4171234A (en) 1976-07-20 1977-07-13 Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
GB29739/77A GB1589455A (en) 1976-07-20 1977-07-15 Crystals and the manufacture thereof
FR7722251A FR2358921A1 (fr) 1976-07-20 1977-07-20 Dispositif a monocristal et procede pour sa fabrication
DE2732807A DE2732807C2 (de) 1976-07-20 1977-07-20 Verfahren zur Herstellung eines Halbleiter-Bauelementes mit einer Einkristallstruktur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11812676A JPS5342675A (en) 1976-09-30 1976-09-30 Single crystal device and its production

Publications (2)

Publication Number Publication Date
JPS5342675A JPS5342675A (en) 1978-04-18
JPS5625015B2 true JPS5625015B2 (OSRAM) 1981-06-10

Family

ID=14728671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11812676A Granted JPS5342675A (en) 1976-07-20 1976-09-30 Single crystal device and its production

Country Status (1)

Country Link
JP (1) JPS5342675A (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153322A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Molecular beam epitaxial growth
JP2766645B2 (ja) * 1988-03-16 1998-06-18 光技術研究開発株式会社 化合物半導体薄膜結晶の成長方法

Also Published As

Publication number Publication date
JPS5342675A (en) 1978-04-18

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