JPS5339886A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5339886A
JPS5339886A JP11359176A JP11359176A JPS5339886A JP S5339886 A JPS5339886 A JP S5339886A JP 11359176 A JP11359176 A JP 11359176A JP 11359176 A JP11359176 A JP 11359176A JP S5339886 A JPS5339886 A JP S5339886A
Authority
JP
Japan
Prior art keywords
semiconductor device
region
transistor
curremt
fron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11359176A
Other languages
Japanese (ja)
Inventor
Yoshisue Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11359176A priority Critical patent/JPS5339886A/en
Publication of JPS5339886A publication Critical patent/JPS5339886A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a Schottky I<2>L element of a high switching speed by producing an acceleration field for the Halls to be injected fron an emitter region in the base region of a lateral transistor to prevent the decrease in curremt amplification factor and increasing the impurity concentration of the collector region of a vertical transistor.
JP11359176A 1976-09-24 1976-09-24 Semiconductor device Pending JPS5339886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11359176A JPS5339886A (en) 1976-09-24 1976-09-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11359176A JPS5339886A (en) 1976-09-24 1976-09-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5339886A true JPS5339886A (en) 1978-04-12

Family

ID=14616087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11359176A Pending JPS5339886A (en) 1976-09-24 1976-09-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5339886A (en)

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