JPS5339879A - Production of silicon gate mis semiconductor device - Google Patents

Production of silicon gate mis semiconductor device

Info

Publication number
JPS5339879A
JPS5339879A JP11368876A JP11368876A JPS5339879A JP S5339879 A JPS5339879 A JP S5339879A JP 11368876 A JP11368876 A JP 11368876A JP 11368876 A JP11368876 A JP 11368876A JP S5339879 A JPS5339879 A JP S5339879A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
silicon gate
mis semiconductor
gate mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11368876A
Other languages
Japanese (ja)
Other versions
JPS60788B2 (en
Inventor
Yukio Tanigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11368876A priority Critical patent/JPS60788B2/en
Publication of JPS5339879A publication Critical patent/JPS5339879A/en
Publication of JPS60788B2 publication Critical patent/JPS60788B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a device of a high scale of integration by making use of the difference in thermal ocidation rate between a Si substrate to become source and drain and poly-Si for gate electrodes in forming both layers and thir contact windows through selfalignment.
COPYRIGHT: (C)1978,JPO&Japio
JP11368876A 1976-09-24 1976-09-24 Manufacturing method of silicon gate MIS semiconductor device Expired JPS60788B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11368876A JPS60788B2 (en) 1976-09-24 1976-09-24 Manufacturing method of silicon gate MIS semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11368876A JPS60788B2 (en) 1976-09-24 1976-09-24 Manufacturing method of silicon gate MIS semiconductor device

Publications (2)

Publication Number Publication Date
JPS5339879A true JPS5339879A (en) 1978-04-12
JPS60788B2 JPS60788B2 (en) 1985-01-10

Family

ID=14618652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11368876A Expired JPS60788B2 (en) 1976-09-24 1976-09-24 Manufacturing method of silicon gate MIS semiconductor device

Country Status (1)

Country Link
JP (1) JPS60788B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63181123U (en) * 1987-05-15 1988-11-22

Also Published As

Publication number Publication date
JPS60788B2 (en) 1985-01-10

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