JPS5330330A - Developing liquid for radiant ray resist - Google Patents
Developing liquid for radiant ray resistInfo
- Publication number
- JPS5330330A JPS5330330A JP10478876A JP10478876A JPS5330330A JP S5330330 A JPS5330330 A JP S5330330A JP 10478876 A JP10478876 A JP 10478876A JP 10478876 A JP10478876 A JP 10478876A JP S5330330 A JPS5330330 A JP S5330330A
- Authority
- JP
- Japan
- Prior art keywords
- developing liquid
- radiant ray
- ray resist
- resist
- radiant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10478876A JPS5330330A (en) | 1976-09-01 | 1976-09-01 | Developing liquid for radiant ray resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10478876A JPS5330330A (en) | 1976-09-01 | 1976-09-01 | Developing liquid for radiant ray resist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5330330A true JPS5330330A (en) | 1978-03-22 |
| JPS5421737B2 JPS5421737B2 (enExample) | 1979-08-01 |
Family
ID=14390191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10478876A Granted JPS5330330A (en) | 1976-09-01 | 1976-09-01 | Developing liquid for radiant ray resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5330330A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5683740A (en) * | 1979-12-13 | 1981-07-08 | Japan Synthetic Rubber Co Ltd | Developer for polymer photoresist |
| JPS59180546A (ja) * | 1983-03-30 | 1984-10-13 | Daikin Ind Ltd | レジスト被膜の現像方法 |
| JPS6170719A (ja) * | 1984-09-14 | 1986-04-11 | Matsushita Electronics Corp | パタ−ン形成方法 |
| JPS62175739A (ja) * | 1986-01-30 | 1987-08-01 | Toshiba Corp | パタ−ン形成方法 |
| JPH0328851A (ja) * | 1988-05-24 | 1991-02-07 | Toppan Printing Co Ltd | 電子ビームレジストのパターン形成方法 |
-
1976
- 1976-09-01 JP JP10478876A patent/JPS5330330A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5683740A (en) * | 1979-12-13 | 1981-07-08 | Japan Synthetic Rubber Co Ltd | Developer for polymer photoresist |
| JPS59180546A (ja) * | 1983-03-30 | 1984-10-13 | Daikin Ind Ltd | レジスト被膜の現像方法 |
| JPS6170719A (ja) * | 1984-09-14 | 1986-04-11 | Matsushita Electronics Corp | パタ−ン形成方法 |
| JPS62175739A (ja) * | 1986-01-30 | 1987-08-01 | Toshiba Corp | パタ−ン形成方法 |
| JPH0328851A (ja) * | 1988-05-24 | 1991-02-07 | Toppan Printing Co Ltd | 電子ビームレジストのパターン形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5421737B2 (enExample) | 1979-08-01 |
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