JPS5326147A - Filter for light detector - Google Patents

Filter for light detector

Info

Publication number
JPS5326147A
JPS5326147A JP9907177A JP9907177A JPS5326147A JP S5326147 A JPS5326147 A JP S5326147A JP 9907177 A JP9907177 A JP 9907177A JP 9907177 A JP9907177 A JP 9907177A JP S5326147 A JPS5326147 A JP S5326147A
Authority
JP
Japan
Prior art keywords
filter
light detector
detector
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9907177A
Other languages
English (en)
Japanese (ja)
Inventor
Shiyupeeto Uerunaa
Pakusu Rasutsuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5326147A publication Critical patent/JPS5326147A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films
    • G02B5/288—Interference filters comprising deposited thin solid films comprising at least one thin film resonant cavity, e.g. in bandpass filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Optical Filters (AREA)
JP9907177A 1976-08-20 1977-08-18 Filter for light detector Pending JPS5326147A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762637616 DE2637616A1 (de) 1976-08-20 1976-08-20 Filter fuer fotodetektoren

Publications (1)

Publication Number Publication Date
JPS5326147A true JPS5326147A (en) 1978-03-10

Family

ID=5985967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9907177A Pending JPS5326147A (en) 1976-08-20 1977-08-18 Filter for light detector

Country Status (6)

Country Link
US (1) US4158133A (enExample)
JP (1) JPS5326147A (enExample)
DE (1) DE2637616A1 (enExample)
FR (1) FR2362412A1 (enExample)
GB (1) GB1591812A (enExample)
IT (1) IT1085965B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5655910A (en) * 1979-10-13 1981-05-16 Fujitsu Ltd Production of optical multilayer film
JPS5865403A (ja) * 1981-07-20 1983-04-19 オプチカル・コ−テイング・ラボラトリ−・インコ−ポレ−テツド 高温で使用するに適したオプチカルコ−テイング
JPS5882578A (ja) * 1981-11-11 1983-05-18 Takashi Mori 太陽電池
JPS5937753U (ja) * 1982-09-02 1984-03-09 工業技術院長 太陽電池
JP2016092243A (ja) * 2014-11-06 2016-05-23 株式会社豊田中央研究所 光電変換素子
JP2016186539A (ja) * 2015-03-27 2016-10-27 株式会社豊田中央研究所 光学フィルタおよび光学測定装置
JP2024546468A (ja) * 2021-12-02 2024-12-24 キョンブク ナショナル ユニバーシティ インダストリー－アカデミック コーオペレーション ファウンデーション 光学二重ファブリペロー干渉計フィルム

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FR2484708A1 (fr) * 1980-06-13 1981-12-18 Telecommunications Sa Photodetecteur rapide de grande surface sensible dans la gamme 0,8 - 1,1 mm
SU1125588A1 (ru) * 1982-01-27 1984-11-23 Киевское Научно-Производственное Объединение "Аналитприбор" Интерференционный отрезающий фильтр
US4577286A (en) * 1983-01-08 1986-03-18 Sharp Kabushiki Kaisha Solar energy-powered calculator or the like
DE3302827A1 (de) * 1983-01-28 1984-08-02 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum herstellen von optischen elementen mit interferenzschichten
US4594605A (en) * 1983-04-28 1986-06-10 Rca Corporation Imaging device having enhanced quantum efficiency
FR2559619B1 (fr) * 1984-02-10 1987-01-16 Thomson Csf Dispositif photosensible avec filtres integres pour la separation des couleurs et procede de fabrication
US4705356A (en) * 1984-07-13 1987-11-10 Optical Coating Laboratory, Inc. Thin film optical variable article having substantial color shift with angle and method
GB8610129D0 (en) * 1986-04-25 1986-05-29 Secr Defence Electro-optical device
EP0253002A1 (de) * 1986-07-12 1988-01-20 Günter Dr.-Ing. Pusch Vorrichtung zur Erkennung thermischer Kontraste
US4851664A (en) * 1988-06-27 1989-07-25 United States Of America As Represented By The Secretary Of The Navy Narrow band and wide angle hemispherical interference optical filter
WO1990009038A1 (en) * 1989-02-03 1990-08-09 British Telecommunications Public Limited Company Optical detector
US4956555A (en) * 1989-06-30 1990-09-11 Rockwell International Corporation Multicolor focal plane arrays
DE4004398A1 (de) * 1990-02-13 1991-08-14 Siemens Ag Wellenlaengenselektiver photodetektor
JPH04179278A (ja) * 1990-11-13 1992-06-25 Sumitomo Electric Ind Ltd 受光素子
IL106265A (en) * 1992-07-13 1999-07-14 Hughes Aircraft Co Extrinsic semiconductor optical filter
DE4234471C1 (de) * 1992-10-13 1994-01-20 Fraunhofer Ges Forschung Vorrichtung zur Absorption infraroter Strahlung
CH695281A5 (de) * 1993-04-02 2006-02-28 Balzers Hochvakuum Verfahren zur Herstellung eines Filters, danach hergestellte optische Schicht, optisches Bauelement mit einer derartigen Schicht und Braeunungsanlage mit einem solchen Element.
DE4439533C2 (de) * 1994-06-02 1996-10-02 Rolf Dipl Phys Weidemann Vorrichtung und Verfahren zur farbmetrischen Erfassung von Farbkontrollfeldern bei der Farbkalibrierung der ausgegebenen Farben von elektronischen Bildverarbeitungssystemen
FI98325C (fi) * 1994-07-07 1997-05-26 Vaisala Oy Selektiivinen infrapunadetektori
US5477075A (en) * 1994-12-16 1995-12-19 Advanced Photonix, Inc. Solid state photodetector with light-responsive rear face
GB2312090A (en) * 1996-04-10 1997-10-15 Rank Taylor Hobson Ltd Photosensitive device
AU7650198A (en) * 1997-04-30 1998-11-24 Ldt Gmbh & Co. Laser-Display-Technologie Kg Method and facility for light-beam projection of images on screen
US6005276A (en) * 1997-11-12 1999-12-21 Advanced Photonix, Inc. Solid state photodetector with light-responsive rear face
US6355939B1 (en) 1998-11-03 2002-03-12 Lockheed Martin Corporation Multi-band infrared photodetector
US6341040B1 (en) * 1999-06-08 2002-01-22 Jds Uniphase Corporation Multi-plate comb filter and applications therefor
US6727192B2 (en) * 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6581465B1 (en) 2001-03-14 2003-06-24 The United States Of America As Represented By The Secretary Of The Navy Micro-electro-mechanical systems ultra-sensitive accelerometer
US6550330B1 (en) 2001-03-14 2003-04-22 The United States Of America As Represented By The Secretary Of The Navy Differential amplification for micro-electro-mechanical ultra-sensitive accelerometer
US7396493B2 (en) 2002-05-21 2008-07-08 3M Innovative Properties Company Multilayer optical film with melt zone to control delamination
US6991695B2 (en) * 2002-05-21 2006-01-31 3M Innovative Properties Company Method for subdividing multilayer optical film cleanly and rapidly
US7095009B2 (en) * 2002-05-21 2006-08-22 3M Innovative Properties Company Photopic detector system and filter therefor
US6818962B2 (en) * 2002-10-25 2004-11-16 Omnivision International Holding Ltd Image sensor having integrated thin film infrared filter
KR20050083833A (ko) * 2002-10-31 2005-08-26 해럴드 필립 전하전송 용량성 위치센서
US6897447B2 (en) * 2002-12-05 2005-05-24 Lockheed Martin Corporation Bias controlled multi-spectral infrared photodetector and imager
US7135698B2 (en) * 2002-12-05 2006-11-14 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager
DE10302165A1 (de) * 2003-01-22 2004-07-29 Robert Bosch Gmbh Infrarotquelle und Gassensor
CA2528299A1 (en) * 2003-06-11 2005-01-06 Furry Brothers, Llc Systems and methods for performing inspections and detecting chemical leaks using an infrared camera system
DE10335189A1 (de) * 2003-07-30 2005-03-03 Daimlerchrysler Ag Vorrichtung zur Sichtverbesserung bei Kraftfahrzeugen
US7223960B2 (en) * 2003-12-03 2007-05-29 Micron Technology, Inc. Image sensor, an image sensor pixel, and methods of forming the same
US7759679B2 (en) * 2004-01-15 2010-07-20 Panasonic Corporation Solid-state imaging device, manufacturing method of solid-state imaging device, and camera employing same
US7521666B2 (en) * 2005-02-17 2009-04-21 Capella Microsystems Inc. Multi-cavity Fabry-Perot ambient light filter apparatus
US20070115415A1 (en) * 2005-11-21 2007-05-24 Arthur Piehl Light absorbers and methods
US20080180665A1 (en) * 2007-01-31 2008-07-31 Redman David J Measuring color spectra using color filter arrays
US20080266563A1 (en) * 2007-04-26 2008-10-30 Redman David J Measuring color using color filter arrays
DE102007032371A1 (de) * 2007-07-06 2009-01-15 Carl Zeiss Laser Optics Gmbh Verfahren zum Beschichten eines optischen Bauelements für eine Laseranordnung
CN101868861B (zh) * 2007-09-13 2013-01-02 加斯·戴 能量接收面板中的三维光电模块
CN102057495B (zh) * 2008-06-04 2013-10-09 旭化成微电子株式会社 量子型红外线传感器以及使用该量子型红外线传感器的量子型红外线气体浓度仪
US20100163759A1 (en) * 2008-12-31 2010-07-01 Stmicroelectronics S.R.L. Radiation sensor with photodiodes being integrated on a semiconductor substrate and corresponding integration process
IT1392502B1 (it) * 2008-12-31 2012-03-09 St Microelectronics Srl Sensore comprendente almeno un fotodiodo a doppia giunzione verticale integrato su substrato semiconduttore e relativo processo di integrazione
DE102009012755A1 (de) * 2009-03-12 2010-09-16 Osram Opto Semiconductors Gmbh Strahlungsempfangendes Halbleiterbauelement und optoelektrisches Bauteil
US20110068423A1 (en) * 2009-09-18 2011-03-24 International Business Machines Corporation Photodetector with wavelength discrimination, and method for forming the same and design structure
BR112014026769A2 (pt) 2012-04-30 2017-06-27 Koninklijke Philips Nv equipamento de imagens, método, e, conjunto detector de imagens
DE102013101001B4 (de) * 2013-01-31 2020-10-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Strahlungssensor
CN103713346B (zh) * 2013-11-29 2016-02-10 杭州麦乐克电子科技有限公司 中心波长2700nm的航空尾气气体检测滤光片
CN103698831B (zh) * 2013-11-29 2016-04-27 杭州麦乐克电子科技有限公司 通过带为7600-9900nm的红外测温滤光片
CN103713347B (zh) * 2013-11-29 2016-02-10 杭州麦乐克电子科技有限公司 通过带为7550-13900nm的红外测温滤光片
WO2015148861A1 (en) * 2014-03-26 2015-10-01 California Institute Of Technology Subnanosecond scintillation detector
US10078142B2 (en) * 2014-03-26 2018-09-18 California Institute Of Technology Sensor integrated metal dielectric filters for solar-blind silicon ultraviolet detectors
US20160035914A1 (en) * 2014-07-31 2016-02-04 Analog Devices, Inc. Filter coating design for optical sensors
JP2016167530A (ja) * 2015-03-10 2016-09-15 ソニー株式会社 固体撮像装置及びその製造方法、並びに電子機器
GB2542802A (en) * 2015-09-30 2017-04-05 Cambridge Display Tech Ltd Organic-based fluorescence sensor with low background signal
JP2019200383A (ja) * 2018-05-18 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 共振器構造体、撮像素子、および電子機器
CN110824599B (zh) 2018-08-14 2021-09-03 白金科技股份有限公司 一种红外带通滤波器
EP3640690B1 (en) * 2018-09-27 2023-06-21 Seiko Epson Corporation Optical device and electronic apparatus
CN115343792B (zh) * 2022-08-23 2025-06-27 同济大学 一种金属-介质混合材料fp腔滤波阵列及制备方法

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US3076861A (en) * 1959-06-30 1963-02-05 Space Technology Lab Inc Electromagnetic radiation converter
US3247392A (en) * 1961-05-17 1966-04-19 Optical Coating Laboratory Inc Optical coating and assembly used as a band pass interference filter reflecting in the ultraviolet and infrared
US3528726A (en) * 1969-07-10 1970-09-15 Perkin Elmer Corp Narrow band interference light filter
US3649359A (en) * 1969-10-27 1972-03-14 Optical Coating Laboratory Inc Multilayer filter with metal dielectric period
US3743847A (en) * 1971-06-01 1973-07-03 Motorola Inc Amorphous silicon film as a uv filter
US3929398A (en) * 1971-08-18 1975-12-30 Harry E Bates High speed optical wavelength detection system
US3781090A (en) * 1972-11-06 1973-12-25 Minolta Camera Kk Four layer anti-reflection coating
US3949463A (en) * 1973-02-13 1976-04-13 Communications Satellite Corporation (Comsat) Method of applying an anti-reflective coating to a solar cell
US3996461A (en) * 1975-03-31 1976-12-07 Texas Instruments Incorporated Silicon photosensor with optical thin film filter

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5655910A (en) * 1979-10-13 1981-05-16 Fujitsu Ltd Production of optical multilayer film
JPS5865403A (ja) * 1981-07-20 1983-04-19 オプチカル・コ−テイング・ラボラトリ−・インコ−ポレ−テツド 高温で使用するに適したオプチカルコ−テイング
JPS5882578A (ja) * 1981-11-11 1983-05-18 Takashi Mori 太陽電池
JPS5937753U (ja) * 1982-09-02 1984-03-09 工業技術院長 太陽電池
JP2016092243A (ja) * 2014-11-06 2016-05-23 株式会社豊田中央研究所 光電変換素子
JP2016186539A (ja) * 2015-03-27 2016-10-27 株式会社豊田中央研究所 光学フィルタおよび光学測定装置
JP2024546468A (ja) * 2021-12-02 2024-12-24 キョンブク ナショナル ユニバーシティ インダストリー－アカデミック コーオペレーション ファウンデーション 光学二重ファブリペロー干渉計フィルム

Also Published As

Publication number Publication date
FR2362412B1 (enExample) 1982-09-10
US4158133A (en) 1979-06-12
GB1591812A (en) 1981-06-24
FR2362412A1 (fr) 1978-03-17
DE2637616A1 (de) 1978-02-23
IT1085965B (it) 1985-05-28

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