JPS53145577A - Production of semiconductor rectifier - Google Patents
Production of semiconductor rectifierInfo
- Publication number
- JPS53145577A JPS53145577A JP5982177A JP5982177A JPS53145577A JP S53145577 A JPS53145577 A JP S53145577A JP 5982177 A JP5982177 A JP 5982177A JP 5982177 A JP5982177 A JP 5982177A JP S53145577 A JPS53145577 A JP S53145577A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor rectifier
- diode
- layer
- impruity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5982177A JPS53145577A (en) | 1977-05-25 | 1977-05-25 | Production of semiconductor rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5982177A JPS53145577A (en) | 1977-05-25 | 1977-05-25 | Production of semiconductor rectifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53145577A true JPS53145577A (en) | 1978-12-18 |
| JPS576272B2 JPS576272B2 (enExample) | 1982-02-04 |
Family
ID=13124263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5982177A Granted JPS53145577A (en) | 1977-05-25 | 1977-05-25 | Production of semiconductor rectifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53145577A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6420648A (en) * | 1987-07-15 | 1989-01-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPH01501030A (ja) * | 1986-09-30 | 1989-04-06 | オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト | アノード側p領域と、隣接する低ドーピングされたnベース領域とを有する半導体構成素子 |
| JPH01259570A (ja) * | 1988-04-11 | 1989-10-17 | Toshiba Corp | 半導体装置及びその製造方法 |
| US5356830A (en) * | 1988-09-19 | 1994-10-18 | Kabushiki Kaisha Tobshiba | Semiconductor device and its manufacturing method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6219818U (enExample) * | 1985-07-22 | 1987-02-05 |
-
1977
- 1977-05-25 JP JP5982177A patent/JPS53145577A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01501030A (ja) * | 1986-09-30 | 1989-04-06 | オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト | アノード側p領域と、隣接する低ドーピングされたnベース領域とを有する半導体構成素子 |
| JPS6420648A (en) * | 1987-07-15 | 1989-01-24 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JPH01259570A (ja) * | 1988-04-11 | 1989-10-17 | Toshiba Corp | 半導体装置及びその製造方法 |
| US5356830A (en) * | 1988-09-19 | 1994-10-18 | Kabushiki Kaisha Tobshiba | Semiconductor device and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS576272B2 (enExample) | 1982-02-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS53145577A (en) | Production of semiconductor rectifier | |
| JPS5391586A (en) | High-dielectric-strength semiconductor element and its manufacture | |
| JPS524179A (en) | Semiconductor rectifier device and its manufacturing method | |
| JPS546789A (en) | Semiconductor light emitting device | |
| JPS5419384A (en) | Production of semiconductor light emitting devices | |
| JPS5348461A (en) | Wire bonder | |
| JPS52104072A (en) | High voltage semiconductor device | |
| JPS5418691A (en) | Manufacture of pn-junction type light emitting diode | |
| JPS5330871A (en) | Production of semiconductor device | |
| JPS5366369A (en) | Semiconductor device | |
| JPS5232677A (en) | Schottky barrier diode | |
| JPS5437098A (en) | Method of producing gallium phosphide greenish luminous element | |
| JPS5240980A (en) | Process for production of semiconductor device | |
| JPS5376764A (en) | Semiconductor rectifying device | |
| JPS5277687A (en) | Manufacture of semiconductor laser element | |
| JPS53126279A (en) | Semiconductor device and production of the same | |
| JPS5263687A (en) | Semiconductor device | |
| JPS52156583A (en) | Electrode formation method in semiconductor device | |
| JPS5335354A (en) | Trigger pulse generator circuit | |
| JPS52149073A (en) | Rectifying device for semiconductor | |
| JPS53142174A (en) | Manufacture of tape carrier element | |
| JPS5376763A (en) | Semiconductor rectifying device | |
| JPS5297679A (en) | Semiconductor rectifying element | |
| JPS53148974A (en) | Manufacture of semiconductor device | |
| JPS5252572A (en) | Packaging construction for semiconductor element |