Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP5036377ApriorityCriticalpatent/JPS53135265A/en
Publication of JPS53135265ApublicationCriticalpatent/JPS53135265A/en
PURPOSE: To reduce the generation of gold-Si eutectic considerably by heat treatment at 300 to 500°C over 15 minutes before gold layer formation when a multilayer-film gold electrode is formed.
COPYRIGHT: (C)1978,JPO&Japio
JP5036377A1977-04-281977-04-28Production of semiconductor device
PendingJPS53135265A
(en)