JPS53130985A - Field effect type semiconductor device of inuslation gate - Google Patents

Field effect type semiconductor device of inuslation gate

Info

Publication number
JPS53130985A
JPS53130985A JP4617477A JP4617477A JPS53130985A JP S53130985 A JPS53130985 A JP S53130985A JP 4617477 A JP4617477 A JP 4617477A JP 4617477 A JP4617477 A JP 4617477A JP S53130985 A JPS53130985 A JP S53130985A
Authority
JP
Japan
Prior art keywords
gate
inuslation
semiconductor device
type semiconductor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4617477A
Other languages
Japanese (ja)
Inventor
Tatsuo Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4617477A priority Critical patent/JPS53130985A/en
Publication of JPS53130985A publication Critical patent/JPS53130985A/en
Pending legal-status Critical Current

Links

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To increase the drain dielectric strength without decreasing gm, by making thicker th e gate insulation film near the both or one region of the source and drain ragions than the gate insulation film of other regions, and by providing a region of opposite conduction type having higher concentration than the impurity concentration of the substrate immediately under the thicker insulating film.
COPYRIGHT: (C)1978,JPO&Japio
JP4617477A 1977-04-20 1977-04-20 Field effect type semiconductor device of inuslation gate Pending JPS53130985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4617477A JPS53130985A (en) 1977-04-20 1977-04-20 Field effect type semiconductor device of inuslation gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4617477A JPS53130985A (en) 1977-04-20 1977-04-20 Field effect type semiconductor device of inuslation gate

Publications (1)

Publication Number Publication Date
JPS53130985A true JPS53130985A (en) 1978-11-15

Family

ID=12739653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4617477A Pending JPS53130985A (en) 1977-04-20 1977-04-20 Field effect type semiconductor device of inuslation gate

Country Status (1)

Country Link
JP (1) JPS53130985A (en)

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