JPS53117376A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53117376A
JPS53117376A JP3256377A JP3256377A JPS53117376A JP S53117376 A JPS53117376 A JP S53117376A JP 3256377 A JP3256377 A JP 3256377A JP 3256377 A JP3256377 A JP 3256377A JP S53117376 A JPS53117376 A JP S53117376A
Authority
JP
Japan
Prior art keywords
active region
leads
semiconductor device
whisker
obviate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3256377A
Other languages
Japanese (ja)
Inventor
Toshiyuki Shikanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3256377A priority Critical patent/JPS53117376A/en
Publication of JPS53117376A publication Critical patent/JPS53117376A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Abstract

PURPOSE: To obviate the application of pressure and heat from leads to an active region and increase the yield of production by forming convex conductor metal electrodes through building-up of a semiconductor substrate where the single active region is formed, other than the active region, and mounting whisker leads thereto.
COPYRIGHT: (C)1978,JPO&Japio
JP3256377A 1977-03-23 1977-03-23 Semiconductor device Pending JPS53117376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3256377A JPS53117376A (en) 1977-03-23 1977-03-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3256377A JPS53117376A (en) 1977-03-23 1977-03-23 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60043891A Division JPS6144448A (en) 1985-03-06 1985-03-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS53117376A true JPS53117376A (en) 1978-10-13

Family

ID=12362368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3256377A Pending JPS53117376A (en) 1977-03-23 1977-03-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53117376A (en)

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