JPS53109475A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53109475A
JPS53109475A JP2384777A JP2384777A JPS53109475A JP S53109475 A JPS53109475 A JP S53109475A JP 2384777 A JP2384777 A JP 2384777A JP 2384777 A JP2384777 A JP 2384777A JP S53109475 A JPS53109475 A JP S53109475A
Authority
JP
Japan
Prior art keywords
substrate
manufacture
semiconductor device
semiconductor
utilization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2384777A
Other languages
English (en)
Inventor
Masao Tamura
Kunihiro Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2384777A priority Critical patent/JPS53109475A/ja
Publication of JPS53109475A publication Critical patent/JPS53109475A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2384777A 1977-03-07 1977-03-07 Manufacture for semiconductor device Pending JPS53109475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2384777A JPS53109475A (en) 1977-03-07 1977-03-07 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2384777A JPS53109475A (en) 1977-03-07 1977-03-07 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS53109475A true JPS53109475A (en) 1978-09-25

Family

ID=12121788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2384777A Pending JPS53109475A (en) 1977-03-07 1977-03-07 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53109475A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214511A (ja) * 1985-03-20 1986-09-24 Sharp Corp 結晶成長方法
US6692648B2 (en) 2000-12-22 2004-02-17 Applied Materials Inc. Method of plasma heating and etching a substrate
US6709609B2 (en) 2000-12-22 2004-03-23 Applied Materials Inc. Plasma heating of a substrate with subsequent high temperature etching
JP2006510196A (ja) * 2002-12-12 2006-03-23 エピオン コーポレーション 高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214511A (ja) * 1985-03-20 1986-09-24 Sharp Corp 結晶成長方法
US6692648B2 (en) 2000-12-22 2004-02-17 Applied Materials Inc. Method of plasma heating and etching a substrate
US6709609B2 (en) 2000-12-22 2004-03-23 Applied Materials Inc. Plasma heating of a substrate with subsequent high temperature etching
JP2006510196A (ja) * 2002-12-12 2006-03-23 エピオン コーポレーション 高エネルギー・クラスタ照射による半導体表面皮膜の再結晶化及び半導体のドーピング方法

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