JPS5291658A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5291658A
JPS5291658A JP796076A JP796076A JPS5291658A JP S5291658 A JPS5291658 A JP S5291658A JP 796076 A JP796076 A JP 796076A JP 796076 A JP796076 A JP 796076A JP S5291658 A JPS5291658 A JP S5291658A
Authority
JP
Japan
Prior art keywords
type
semiconductor device
type region
network
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP796076A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5756780B2 (en, 2012
Inventor
Yoichi Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP796076A priority Critical patent/JPS5291658A/ja
Publication of JPS5291658A publication Critical patent/JPS5291658A/ja
Publication of JPS5756780B2 publication Critical patent/JPS5756780B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
JP796076A 1976-01-29 1976-01-29 Semiconductor device Granted JPS5291658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP796076A JPS5291658A (en) 1976-01-29 1976-01-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP796076A JPS5291658A (en) 1976-01-29 1976-01-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5291658A true JPS5291658A (en) 1977-08-02
JPS5756780B2 JPS5756780B2 (en, 2012) 1982-12-01

Family

ID=11680041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP796076A Granted JPS5291658A (en) 1976-01-29 1976-01-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5291658A (en, 2012)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60209044A (ja) * 1984-03-30 1985-10-21 東洋紡績株式会社 タイヤコ−ド用織物
JPS6134244A (ja) * 1984-07-26 1986-02-18 東レ株式会社 樹脂補強用織物およびその製造方法
JPH0211173U (en, 2012) * 1988-07-05 1990-01-24

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465216A (en) * 1966-07-22 1969-09-02 Stanislas Teszner Bistable semiconductor device for heavy currents

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465216A (en) * 1966-07-22 1969-09-02 Stanislas Teszner Bistable semiconductor device for heavy currents

Also Published As

Publication number Publication date
JPS5756780B2 (en, 2012) 1982-12-01

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