JPS5290276A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5290276A JPS5290276A JP661176A JP661176A JPS5290276A JP S5290276 A JPS5290276 A JP S5290276A JP 661176 A JP661176 A JP 661176A JP 661176 A JP661176 A JP 661176A JP S5290276 A JPS5290276 A JP S5290276A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- production
- film
- milder
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP661176A JPS5290276A (en) | 1976-01-26 | 1976-01-26 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP661176A JPS5290276A (en) | 1976-01-26 | 1976-01-26 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5290276A true JPS5290276A (en) | 1977-07-29 |
Family
ID=11643144
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP661176A Pending JPS5290276A (en) | 1976-01-26 | 1976-01-26 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5290276A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230337A (ja) * | 1985-07-31 | 1987-02-09 | Nec Corp | 半導体集積回路装置 |
| JPS6325932A (ja) * | 1986-07-17 | 1988-02-03 | Nec Corp | 樹脂封止型半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49121484A (ja) * | 1973-03-20 | 1974-11-20 |
-
1976
- 1976-01-26 JP JP661176A patent/JPS5290276A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49121484A (ja) * | 1973-03-20 | 1974-11-20 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230337A (ja) * | 1985-07-31 | 1987-02-09 | Nec Corp | 半導体集積回路装置 |
| JPS6325932A (ja) * | 1986-07-17 | 1988-02-03 | Nec Corp | 樹脂封止型半導体装置 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS53135263A (en) | Production of semiconductor device | |
| JPS5290276A (en) | Production of semiconductor device | |
| JPS5236797A (en) | Manufacturing method of ferrite elementary unit junction | |
| JPS5376748A (en) | Forming method of insulation fulm | |
| JPS53127266A (en) | Forming method of marker | |
| JPS52149076A (en) | Semiconductor integrated circuit and its preparing method | |
| JPS5436179A (en) | Forming method of nitride film | |
| JPS5379469A (en) | Manufacture of glass mold type semiconductor rectifying device | |
| JPS5377485A (en) | Production of piezo-vibrator | |
| JPS5287359A (en) | Production of semiconductor device | |
| JPS52143767A (en) | Production of semiconductor device | |
| JPS5285465A (en) | Production of semiconductor device | |
| JPS5394182A (en) | Production of semiconductor device | |
| JPS5396761A (en) | Production of semiconductor device | |
| JPS5368070A (en) | Etching method | |
| JPS52127174A (en) | Minute patern formation method | |
| JPS5351964A (en) | Selective growth method for semiconductor crystal | |
| JPS52134376A (en) | Production of semiconductor device | |
| JPS53139476A (en) | Manufacture of semiconductor device | |
| JPS5259589A (en) | Production of semiconductor device | |
| JPS52106680A (en) | Surface stabilized semiconductor element | |
| JPS51151071A (en) | Manufacturing method of a semiconductor apparatus | |
| JPS5432067A (en) | Semiconductor device and its manufacture | |
| JPS5367342A (en) | Using method of heat-sensitive thyristor | |
| JPS5296042A (en) | Forming method for light waveguide |