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Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP340176ApriorityCriticalpatent/JPS5286780A/en
Publication of JPS5286780ApublicationCriticalpatent/JPS5286780A/en
PURPOSE: To remove the cause for voltage instability without performing diffusion of N type by forming a diode through P+ diffusion in an N type substrate and forming a P+ diffused region encircling this.