JPS5282079A - Mos transistor - Google Patents

Mos transistor

Info

Publication number
JPS5282079A
JPS5282079A JP15689275A JP15689275A JPS5282079A JP S5282079 A JPS5282079 A JP S5282079A JP 15689275 A JP15689275 A JP 15689275A JP 15689275 A JP15689275 A JP 15689275A JP S5282079 A JPS5282079 A JP S5282079A
Authority
JP
Japan
Prior art keywords
mos transistor
forming
gate
encircled
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15689275A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15689275A priority Critical patent/JPS5282079A/en
Publication of JPS5282079A publication Critical patent/JPS5282079A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To produce a MOSFET of high packaging density, small parasitic capacity and high gate dielectric strength by forming an Si gate encircled by an SiO2 film and forming source and drain deeper, narrower and longitudinally long.
JP15689275A 1975-12-29 1975-12-29 Mos transistor Pending JPS5282079A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15689275A JPS5282079A (en) 1975-12-29 1975-12-29 Mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15689275A JPS5282079A (en) 1975-12-29 1975-12-29 Mos transistor

Publications (1)

Publication Number Publication Date
JPS5282079A true JPS5282079A (en) 1977-07-08

Family

ID=15637665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15689275A Pending JPS5282079A (en) 1975-12-29 1975-12-29 Mos transistor

Country Status (1)

Country Link
JP (1) JPS5282079A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008084995A (en) * 2006-09-26 2008-04-10 Sharp Corp High breakdown voltage trench mos transistor and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008084995A (en) * 2006-09-26 2008-04-10 Sharp Corp High breakdown voltage trench mos transistor and manufacturing method thereof

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