JPS5269576A - Method of making specified bevel angle at edge of etching - Google Patents

Method of making specified bevel angle at edge of etching

Info

Publication number
JPS5269576A
JPS5269576A JP51145509A JP14550976A JPS5269576A JP S5269576 A JPS5269576 A JP S5269576A JP 51145509 A JP51145509 A JP 51145509A JP 14550976 A JP14550976 A JP 14550976A JP S5269576 A JPS5269576 A JP S5269576A
Authority
JP
Japan
Prior art keywords
etching
edge
bevel angle
making specified
specified bevel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51145509A
Other languages
English (en)
Japanese (ja)
Inventor
Beru Guido
Hoetsupunaa Yoahimu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5269576A publication Critical patent/JPS5269576A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes

Landscapes

  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP51145509A 1975-12-04 1976-12-03 Method of making specified bevel angle at edge of etching Pending JPS5269576A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752554638 DE2554638A1 (de) 1975-12-04 1975-12-04 Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante

Publications (1)

Publication Number Publication Date
JPS5269576A true JPS5269576A (en) 1977-06-09

Family

ID=5963486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51145509A Pending JPS5269576A (en) 1975-12-04 1976-12-03 Method of making specified bevel angle at edge of etching

Country Status (7)

Country Link
JP (1) JPS5269576A (show.php)
BE (1) BE849065A (show.php)
DE (1) DE2554638A1 (show.php)
FR (1) FR2334199A1 (show.php)
GB (1) GB1551290A (show.php)
IT (1) IT1065165B (show.php)
NL (1) NL7613275A (show.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157234A (en) * 1979-05-25 1980-12-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JP2011243657A (ja) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd 半導体装置の製造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD136670A1 (de) * 1976-02-04 1979-07-18 Rudolf Sacher Verfahren und vorrichtung zur herstellung von halbleiterstrukturen
DE2754549A1 (de) * 1977-12-07 1979-06-13 Siemens Ag Optoelektronischer sensor nach dem prinzip der ladungsinjektion
DE2837485A1 (de) * 1978-08-28 1980-04-17 Siemens Ag Verfahren zur herstellung einer ladungsgekoppelten anordnung fuer sensoren und speicher
JPS60128622A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd エツチング法
GB2165692B (en) * 1984-08-25 1989-05-04 Ricoh Kk Manufacture of interconnection patterns
EP0363099B1 (en) * 1988-10-02 1996-02-28 Canon Kabushiki Kaisha Fine working method of crystalline material
DE4140330C1 (show.php) * 1991-12-06 1993-03-18 Texas Instruments Deutschland Gmbh, 8050 Freising, De
DE19837395C2 (de) * 1998-08-18 2001-07-19 Infineon Technologies Ag Verfahren zur Herstellung eines eine strukturierte Isolationsschicht enthaltenden Halbleiterbauelements
US6352934B1 (en) * 1999-08-26 2002-03-05 Infineon Technologies Ag Sidewall oxide process for improved shallow junction formation in support region
US20060175670A1 (en) * 2005-02-10 2006-08-10 Nec Compound Semiconductor Device, Ltd. Field effect transistor and method of manufacturing a field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157234A (en) * 1979-05-25 1980-12-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JP2011243657A (ja) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2334199B1 (show.php) 1979-04-06
NL7613275A (nl) 1977-06-07
DE2554638A1 (de) 1977-06-16
FR2334199A1 (fr) 1977-07-01
BE849065A (fr) 1977-04-01
GB1551290A (en) 1979-08-30
IT1065165B (it) 1985-02-25

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