JPS5267982A - Manufacture of schottky barrier type field effect transistor - Google Patents
Manufacture of schottky barrier type field effect transistorInfo
- Publication number
- JPS5267982A JPS5267982A JP14427675A JP14427675A JPS5267982A JP S5267982 A JPS5267982 A JP S5267982A JP 14427675 A JP14427675 A JP 14427675A JP 14427675 A JP14427675 A JP 14427675A JP S5267982 A JPS5267982 A JP S5267982A
- Authority
- JP
- Japan
- Prior art keywords
- schottky barrier
- manufacture
- barrier type
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14427675A JPS5833716B2 (ja) | 1975-12-03 | 1975-12-03 | シヨツトキ−シヨウヘキガタデンカイコウカトランジスタノ セイゾウホウホウ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14427675A JPS5833716B2 (ja) | 1975-12-03 | 1975-12-03 | シヨツトキ−シヨウヘキガタデンカイコウカトランジスタノ セイゾウホウホウ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5267982A true JPS5267982A (en) | 1977-06-06 |
JPS5833716B2 JPS5833716B2 (ja) | 1983-07-21 |
Family
ID=15358313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14427675A Expired JPS5833716B2 (ja) | 1975-12-03 | 1975-12-03 | シヨツトキ−シヨウヘキガタデンカイコウカトランジスタノ セイゾウホウホウ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5833716B2 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54143075A (en) * | 1978-04-28 | 1979-11-07 | Fujitsu Ltd | Semiconductor device |
JPS57177566A (en) * | 1981-04-24 | 1982-11-01 | Nec Corp | Schottky barrier gate type field effect transistor |
JPS57177567A (en) * | 1981-04-24 | 1982-11-01 | Nec Corp | Manufacture of semiconductor device |
JPS5851572A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS5856470A (ja) * | 1981-09-30 | 1983-04-04 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS59181066A (ja) * | 1983-03-31 | 1984-10-15 | Agency Of Ind Science & Technol | 半導体装置の製造方法 |
JPS60244074A (ja) * | 1984-05-18 | 1985-12-03 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPS6187379A (ja) * | 1984-10-04 | 1986-05-02 | Fujitsu Ltd | 半導体装置の製造方法 |
US4636822A (en) * | 1984-08-27 | 1987-01-13 | International Business Machines Corporation | GaAs short channel lightly doped drain MESFET structure and fabrication |
JPH0513444A (ja) * | 1991-10-23 | 1993-01-22 | Hitachi Ltd | 電界効果トランジスタ |
-
1975
- 1975-12-03 JP JP14427675A patent/JPS5833716B2/ja not_active Expired
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54143075A (en) * | 1978-04-28 | 1979-11-07 | Fujitsu Ltd | Semiconductor device |
JPS57177566A (en) * | 1981-04-24 | 1982-11-01 | Nec Corp | Schottky barrier gate type field effect transistor |
JPS57177567A (en) * | 1981-04-24 | 1982-11-01 | Nec Corp | Manufacture of semiconductor device |
JPS5851572A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0324059B2 (ja) * | 1981-09-22 | 1991-04-02 | Fujitsu Ltd | |
JPS5856470A (ja) * | 1981-09-30 | 1983-04-04 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS59181066A (ja) * | 1983-03-31 | 1984-10-15 | Agency Of Ind Science & Technol | 半導体装置の製造方法 |
JPS60244074A (ja) * | 1984-05-18 | 1985-12-03 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US4636822A (en) * | 1984-08-27 | 1987-01-13 | International Business Machines Corporation | GaAs short channel lightly doped drain MESFET structure and fabrication |
JPS6187379A (ja) * | 1984-10-04 | 1986-05-02 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0513444A (ja) * | 1991-10-23 | 1993-01-22 | Hitachi Ltd | 電界効果トランジスタ |
Also Published As
Publication number | Publication date |
---|---|
JPS5833716B2 (ja) | 1983-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS535581A (en) | Schottky gate type field effect transistor | |
JPS5222480A (en) | Insulating gate field effect transistor | |
JPS5267982A (en) | Manufacture of schottky barrier type field effect transistor | |
JPS5362985A (en) | Mis type field effect transistor and its production | |
JPS5365078A (en) | Production of junction type field effect transistor | |
JPS5315081A (en) | Junction type field effect transistor and its production | |
JPS5382179A (en) | Field effect transistor | |
JPS5245280A (en) | Field effect transistor of schottky barrier type | |
JPS5384570A (en) | Field effect semiconductor device and its manufacture | |
JPS51111042A (en) | Gate circuit | |
JPS5384571A (en) | Insulating gate type field effect transistor and its manufacture | |
JPS53143177A (en) | Production of field effect transistor | |
JPS5263074A (en) | Insulated gate type field effect transistor and its production | |
JPS5215274A (en) | Semiconductor device | |
JPS5212583A (en) | Field effect transistor | |
JPS54882A (en) | Manufacture of field effect transistor | |
JPS51123076A (en) | The manufacturing process of field effect transistor | |
JPS52100877A (en) | Field effect transistor of junction type | |
JPS5378177A (en) | Field effect transistor | |
JPS5227279A (en) | Semiconductor unit | |
JPS5255387A (en) | Schottky barrier type field effect transistor | |
JPS5382181A (en) | Manufacture for semiconductor device | |
JPS53114683A (en) | Field effect transistor of insulating gate type | |
JPS5338272A (en) | Production of schottky barrier gate type field effect transistor | |
JPS5371573A (en) | Field effect transistor of isolating gate type |