JPS5267982A - Manufacture of schottky barrier type field effect transistor - Google Patents

Manufacture of schottky barrier type field effect transistor

Info

Publication number
JPS5267982A
JPS5267982A JP14427675A JP14427675A JPS5267982A JP S5267982 A JPS5267982 A JP S5267982A JP 14427675 A JP14427675 A JP 14427675A JP 14427675 A JP14427675 A JP 14427675A JP S5267982 A JPS5267982 A JP S5267982A
Authority
JP
Japan
Prior art keywords
schottky barrier
manufacture
barrier type
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14427675A
Other languages
English (en)
Other versions
JPS5833716B2 (ja
Inventor
Kiyoshi Yoneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP14427675A priority Critical patent/JPS5833716B2/ja
Publication of JPS5267982A publication Critical patent/JPS5267982A/ja
Publication of JPS5833716B2 publication Critical patent/JPS5833716B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP14427675A 1975-12-03 1975-12-03 シヨツトキ−シヨウヘキガタデンカイコウカトランジスタノ セイゾウホウホウ Expired JPS5833716B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14427675A JPS5833716B2 (ja) 1975-12-03 1975-12-03 シヨツトキ−シヨウヘキガタデンカイコウカトランジスタノ セイゾウホウホウ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14427675A JPS5833716B2 (ja) 1975-12-03 1975-12-03 シヨツトキ−シヨウヘキガタデンカイコウカトランジスタノ セイゾウホウホウ

Publications (2)

Publication Number Publication Date
JPS5267982A true JPS5267982A (en) 1977-06-06
JPS5833716B2 JPS5833716B2 (ja) 1983-07-21

Family

ID=15358313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14427675A Expired JPS5833716B2 (ja) 1975-12-03 1975-12-03 シヨツトキ−シヨウヘキガタデンカイコウカトランジスタノ セイゾウホウホウ

Country Status (1)

Country Link
JP (1) JPS5833716B2 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143075A (en) * 1978-04-28 1979-11-07 Fujitsu Ltd Semiconductor device
JPS57177566A (en) * 1981-04-24 1982-11-01 Nec Corp Schottky barrier gate type field effect transistor
JPS57177567A (en) * 1981-04-24 1982-11-01 Nec Corp Manufacture of semiconductor device
JPS5851572A (ja) * 1981-09-22 1983-03-26 Fujitsu Ltd 半導体装置の製造方法
JPS5856470A (ja) * 1981-09-30 1983-04-04 Fujitsu Ltd 半導体装置の製造方法
JPS59181066A (ja) * 1983-03-31 1984-10-15 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS60244074A (ja) * 1984-05-18 1985-12-03 Fujitsu Ltd 半導体装置及びその製造方法
JPS6187379A (ja) * 1984-10-04 1986-05-02 Fujitsu Ltd 半導体装置の製造方法
US4636822A (en) * 1984-08-27 1987-01-13 International Business Machines Corporation GaAs short channel lightly doped drain MESFET structure and fabrication
JPH0513444A (ja) * 1991-10-23 1993-01-22 Hitachi Ltd 電界効果トランジスタ

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54143075A (en) * 1978-04-28 1979-11-07 Fujitsu Ltd Semiconductor device
JPS57177566A (en) * 1981-04-24 1982-11-01 Nec Corp Schottky barrier gate type field effect transistor
JPS57177567A (en) * 1981-04-24 1982-11-01 Nec Corp Manufacture of semiconductor device
JPS5851572A (ja) * 1981-09-22 1983-03-26 Fujitsu Ltd 半導体装置の製造方法
JPH0324059B2 (ja) * 1981-09-22 1991-04-02 Fujitsu Ltd
JPS5856470A (ja) * 1981-09-30 1983-04-04 Fujitsu Ltd 半導体装置の製造方法
JPS59181066A (ja) * 1983-03-31 1984-10-15 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS60244074A (ja) * 1984-05-18 1985-12-03 Fujitsu Ltd 半導体装置及びその製造方法
US4636822A (en) * 1984-08-27 1987-01-13 International Business Machines Corporation GaAs short channel lightly doped drain MESFET structure and fabrication
JPS6187379A (ja) * 1984-10-04 1986-05-02 Fujitsu Ltd 半導体装置の製造方法
JPH0513444A (ja) * 1991-10-23 1993-01-22 Hitachi Ltd 電界効果トランジスタ

Also Published As

Publication number Publication date
JPS5833716B2 (ja) 1983-07-21

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