JPS5267276A - Manufacture of semiconductor unit - Google Patents

Manufacture of semiconductor unit

Info

Publication number
JPS5267276A
JPS5267276A JP50130240A JP13024075A JPS5267276A JP S5267276 A JPS5267276 A JP S5267276A JP 50130240 A JP50130240 A JP 50130240A JP 13024075 A JP13024075 A JP 13024075A JP S5267276 A JPS5267276 A JP S5267276A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor unit
mosic
integration
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50130240A
Other languages
English (en)
Japanese (ja)
Inventor
Taketoshi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50130240A priority Critical patent/JPS5267276A/ja
Priority to GB44158/76A priority patent/GB1564130A/en
Priority to DE19762648646 priority patent/DE2648646A1/de
Publication of JPS5267276A publication Critical patent/JPS5267276A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having localised breakdown regions, e.g. built-in avalanching regions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP50130240A 1975-10-29 1975-10-29 Manufacture of semiconductor unit Pending JPS5267276A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50130240A JPS5267276A (en) 1975-10-29 1975-10-29 Manufacture of semiconductor unit
GB44158/76A GB1564130A (en) 1975-10-29 1976-10-25 Semiconductor integrated circuit and a method for manufacturing the same
DE19762648646 DE2648646A1 (de) 1975-10-29 1976-10-27 Integrierte halbleiterschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50130240A JPS5267276A (en) 1975-10-29 1975-10-29 Manufacture of semiconductor unit

Publications (1)

Publication Number Publication Date
JPS5267276A true JPS5267276A (en) 1977-06-03

Family

ID=15029463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50130240A Pending JPS5267276A (en) 1975-10-29 1975-10-29 Manufacture of semiconductor unit

Country Status (3)

Country Link
JP (1) JPS5267276A (enrdf_load_stackoverflow)
DE (1) DE2648646A1 (enrdf_load_stackoverflow)
GB (1) GB1564130A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5056189A (enrdf_load_stackoverflow) * 1973-09-14 1975-05-16

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034914B1 (enrdf_load_stackoverflow) * 1969-10-27 1975-11-12
US3821781A (en) * 1972-11-01 1974-06-28 Ibm Complementary field effect transistors having p doped silicon gates

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5056189A (enrdf_load_stackoverflow) * 1973-09-14 1975-05-16

Also Published As

Publication number Publication date
GB1564130A (en) 1980-04-02
DE2648646C2 (enrdf_load_stackoverflow) 1988-01-21
DE2648646A1 (de) 1977-05-05

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