JPS5265684A - Production of field effect transistor - Google Patents

Production of field effect transistor

Info

Publication number
JPS5265684A
JPS5265684A JP50141896A JP14189675A JPS5265684A JP S5265684 A JPS5265684 A JP S5265684A JP 50141896 A JP50141896 A JP 50141896A JP 14189675 A JP14189675 A JP 14189675A JP S5265684 A JPS5265684 A JP S5265684A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
polycrystalline
verticalj
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50141896A
Other languages
Japanese (ja)
Other versions
JPS583391B2 (en
Inventor
Yasunari Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14189675A priority Critical patent/JPS583391B2/en
Publication of JPS5265684A publication Critical patent/JPS5265684A/en
Publication of JPS583391B2 publication Critical patent/JPS583391B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To facilitate mask aligning and obtain a verticalJ-FET having desired pinch-off voltage and mutual conductance by determining the spacing of gate region with a polycrystalline Si silm formed in source portion and forming source electrode simply in contact with the polycrystalline Si film.
JP14189675A 1975-11-27 1975-11-27 The power of transistors is high. Expired JPS583391B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14189675A JPS583391B2 (en) 1975-11-27 1975-11-27 The power of transistors is high.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14189675A JPS583391B2 (en) 1975-11-27 1975-11-27 The power of transistors is high.

Publications (2)

Publication Number Publication Date
JPS5265684A true JPS5265684A (en) 1977-05-31
JPS583391B2 JPS583391B2 (en) 1983-01-21

Family

ID=15302674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14189675A Expired JPS583391B2 (en) 1975-11-27 1975-11-27 The power of transistors is high.

Country Status (1)

Country Link
JP (1) JPS583391B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114376A (en) * 1980-02-13 1981-09-08 Semiconductor Res Found Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114376A (en) * 1980-02-13 1981-09-08 Semiconductor Res Found Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS583391B2 (en) 1983-01-21

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