JPS5260579A - Method of producing semiconductor device - Google Patents
Method of producing semiconductor deviceInfo
- Publication number
- JPS5260579A JPS5260579A JP51134758A JP13475876A JPS5260579A JP S5260579 A JPS5260579 A JP S5260579A JP 51134758 A JP51134758 A JP 51134758A JP 13475876 A JP13475876 A JP 13475876A JP S5260579 A JPS5260579 A JP S5260579A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- producing semiconductor
- producing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/944—Shadow
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7513161A NL7513161A (nl) | 1975-11-11 | 1975-11-11 | Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze. |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5260579A true JPS5260579A (en) | 1977-05-19 |
JPS5756786B2 JPS5756786B2 (ja) | 1982-12-01 |
Family
ID=19824830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51134758A Granted JPS5260579A (en) | 1975-11-11 | 1976-11-11 | Method of producing semiconductor device |
Country Status (9)
Country | Link |
---|---|
US (1) | US4104085A (ja) |
JP (1) | JPS5260579A (ja) |
AU (1) | AU505948B2 (ja) |
CA (1) | CA1071333A (ja) |
DE (1) | DE2650511C2 (ja) |
FR (1) | FR2331884A1 (ja) |
GB (1) | GB1553417A (ja) |
IT (1) | IT1070048B (ja) |
NL (1) | NL7513161A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856481A (ja) * | 1981-09-30 | 1983-04-04 | Fujitsu Ltd | ゲルマニウム受光素子の製造方法 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2802838A1 (de) * | 1978-01-23 | 1979-08-16 | Siemens Ag | Mis-feldeffekttransistor mit kurzer kanallaenge |
US4357178A (en) * | 1978-12-20 | 1982-11-02 | Ibm Corporation | Schottky barrier diode with controlled characteristics and fabrication method |
FR2445617A1 (fr) * | 1978-12-28 | 1980-07-25 | Ibm France | Resistance a tension de claquage amelioree obtenue par une double implantation ionique dans un substrat semi-conducteur et son procede de fabrication |
JPS5826829B2 (ja) * | 1979-08-30 | 1983-06-06 | 富士通株式会社 | ダイナミックメモリセルの製造方法 |
NL7907680A (nl) * | 1979-10-18 | 1981-04-22 | Philips Nv | Zenerdiode. |
DE3003391C2 (de) * | 1980-01-31 | 1984-08-30 | Josef Dipl.-Phys. Dr. 8041 Fahrenzhausen Kemmer | Strahlungsdetektor mit einem passivierten pn-Halbleiterübergang |
US4473941A (en) * | 1982-12-22 | 1984-10-02 | Ncr Corporation | Method of fabricating zener diodes |
EP0176778B1 (de) * | 1984-09-28 | 1991-01-16 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines pn-Übergangs mit hoher Durchbruchsspannung |
US4579626A (en) * | 1985-02-28 | 1986-04-01 | Rca Corporation | Method of making a charge-coupled device imager |
US4910158A (en) * | 1987-11-23 | 1990-03-20 | Hughes Aircraft Company | Zener diode emulation and method of forming the same |
US4968634A (en) * | 1988-05-20 | 1990-11-06 | Siemens Aktiengesellschaft | Fabrication process for photodiodes responsive to blue light |
CN1011991B (zh) * | 1988-08-29 | 1991-03-13 | 里特机械公司 | 在纺织机械内的一种加热方法 |
JPH02159775A (ja) * | 1988-12-14 | 1990-06-19 | Toshiba Corp | 半導体受光素子及びその製造方法 |
US5256579A (en) * | 1989-04-03 | 1993-10-26 | Massachusetts Institute Of Technology | Tunable-frequency Gunn diodes fabrication with focused ion beams |
US5550069A (en) * | 1990-06-23 | 1996-08-27 | El Mos Electronik In Mos Technologie Gmbh | Method for producing a PMOS transistor |
DE4020076A1 (de) * | 1990-06-23 | 1992-01-09 | El Mos Elektronik In Mos Techn | Verfahren zur herstellung eines pmos-transistors sowie pmos-transistor |
JPH07245397A (ja) * | 1994-03-07 | 1995-09-19 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US5384273A (en) * | 1994-04-26 | 1995-01-24 | Motorola Inc. | Method of making a semiconductor device having a short gate length |
EP0792525B1 (en) * | 1995-09-18 | 2001-12-05 | Koninklijke Philips Electronics N.V. | A varicap diode and method of manufacturing a varicap diode |
JPH10242394A (ja) * | 1997-02-27 | 1998-09-11 | Matsushita Electron Corp | 半導体装置の製造方法 |
JP3016371B2 (ja) * | 1997-03-26 | 2000-03-06 | 日本電気株式会社 | 光検出器の製造方法 |
DE19837395C2 (de) * | 1998-08-18 | 2001-07-19 | Infineon Technologies Ag | Verfahren zur Herstellung eines eine strukturierte Isolationsschicht enthaltenden Halbleiterbauelements |
US6815363B2 (en) * | 2000-08-11 | 2004-11-09 | The Regents Of The University Of California | Method for nanomachining high aspect ratio structures |
US7887711B2 (en) * | 2002-06-13 | 2011-02-15 | International Business Machines Corporation | Method for etching chemically inert metal oxides |
DE102009017505B4 (de) * | 2008-11-21 | 2014-07-10 | Ketek Gmbh | Strahlungsdetektor, Verwendung eines Strahlungsdetektors und Verfahren zur Herstellung eines Strahlungsdetektors |
US8350365B1 (en) * | 2011-01-13 | 2013-01-08 | Xilinx, Inc. | Mitigation of well proximity effect in integrated circuits |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4826480A (ja) * | 1971-08-11 | 1973-04-07 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3697829A (en) * | 1968-12-30 | 1972-10-10 | Gen Electric | Semiconductor devices with improved voltage breakdown characteristics |
BE756039A (fr) * | 1969-09-15 | 1971-02-15 | Western Electric Co | Procede pour former, par implantation d'ions, une zone localisee dans un corps de semi-conducteur |
US3666548A (en) * | 1970-01-06 | 1972-05-30 | Ibm | Monocrystalline semiconductor body having dielectrically isolated regions and method of forming |
DE2207654B2 (de) * | 1972-02-18 | 1974-02-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum Herstellen einer Zenerdiode |
US3769109A (en) * | 1972-04-19 | 1973-10-30 | Bell Telephone Labor Inc | PRODUCTION OF SiO{11 {11 TAPERED FILMS |
-
1975
- 1975-11-11 NL NL7513161A patent/NL7513161A/xx unknown
-
1976
- 1976-11-03 US US05/738,530 patent/US4104085A/en not_active Expired - Lifetime
- 1976-11-04 DE DE2650511A patent/DE2650511C2/de not_active Expired
- 1976-11-05 CA CA264,987A patent/CA1071333A/en not_active Expired
- 1976-11-08 GB GB46337/76A patent/GB1553417A/en not_active Expired
- 1976-11-08 IT IT29113/76A patent/IT1070048B/it active
- 1976-11-09 AU AU19442/76A patent/AU505948B2/en not_active Expired
- 1976-11-10 FR FR7633868A patent/FR2331884A1/fr active Granted
- 1976-11-11 JP JP51134758A patent/JPS5260579A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4826480A (ja) * | 1971-08-11 | 1973-04-07 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856481A (ja) * | 1981-09-30 | 1983-04-04 | Fujitsu Ltd | ゲルマニウム受光素子の製造方法 |
JPS6259903B2 (ja) * | 1981-09-30 | 1987-12-14 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
CA1071333A (en) | 1980-02-05 |
AU1944276A (en) | 1978-05-18 |
DE2650511C2 (de) | 1983-10-27 |
JPS5756786B2 (ja) | 1982-12-01 |
NL7513161A (nl) | 1977-05-13 |
GB1553417A (en) | 1979-09-26 |
US4104085A (en) | 1978-08-01 |
FR2331884A1 (fr) | 1977-06-10 |
AU505948B2 (en) | 1979-12-06 |
FR2331884B1 (ja) | 1982-06-18 |
IT1070048B (it) | 1985-03-25 |
DE2650511A1 (de) | 1977-05-12 |
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