Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP13601175ApriorityCriticalpatent/JPS5259582A/en
Publication of JPS5259582ApublicationCriticalpatent/JPS5259582A/en
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure
(AREA)
Electrodes Of Semiconductors
(AREA)
Weting
(AREA)
Abstract
PURPOSE: To facilitate the formation of electrodes by forming electrode metal after subjecting the electrode forming regions exposed in the openings of a photo resist film to dry honing using a specified abrasive material.
COPYRIGHT: (C)1977,JPO&Japio
JP13601175A1975-11-111975-11-11Production of semiconductor device
PendingJPS5259582A
(en)