Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP13143075ApriorityCriticalpatent/JPS5255860A/en
Publication of JPS5255860ApublicationCriticalpatent/JPS5255860A/en
PURPOSE: To facilitate selective diffusion of As by using double layers of an SiO2 film and polycrystalline Si film as a mask material in the selective diffusion of As.
COPYRIGHT: (C)1977,JPO&Japio
JP13143075A1975-11-041975-11-04Production of semiconductor device
PendingJPS5255860A
(en)