JPS5252584A - Method of settling insulation layer by sputtering - Google Patents

Method of settling insulation layer by sputtering

Info

Publication number
JPS5252584A
JPS5252584A JP12962975A JP12962975A JPS5252584A JP S5252584 A JPS5252584 A JP S5252584A JP 12962975 A JP12962975 A JP 12962975A JP 12962975 A JP12962975 A JP 12962975A JP S5252584 A JPS5252584 A JP S5252584A
Authority
JP
Japan
Prior art keywords
settling
sputtering
insulation layer
layer
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12962975A
Other languages
Japanese (ja)
Other versions
JPS5922376B2 (en
Inventor
Tadashi Serikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12962975A priority Critical patent/JPS5922376B2/en
Publication of JPS5252584A publication Critical patent/JPS5252584A/en
Publication of JPS5922376B2 publication Critical patent/JPS5922376B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make the step difference of an insulation layer mild by applying d.c. potential on the basis of grounding potential to an electrode object to be placed thereon with wafer at the time of settling the insualtion layer on the semiconductor wafer formed with wiring layer by sputtering.
COPYRIGHT: (C)1977,JPO&Japio
JP12962975A 1975-10-27 1975-10-27 Spatsuta ring niyoruzetsuensouno chinchiyakuhou Expired JPS5922376B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12962975A JPS5922376B2 (en) 1975-10-27 1975-10-27 Spatsuta ring niyoruzetsuensouno chinchiyakuhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12962975A JPS5922376B2 (en) 1975-10-27 1975-10-27 Spatsuta ring niyoruzetsuensouno chinchiyakuhou

Publications (2)

Publication Number Publication Date
JPS5252584A true JPS5252584A (en) 1977-04-27
JPS5922376B2 JPS5922376B2 (en) 1984-05-26

Family

ID=15014206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12962975A Expired JPS5922376B2 (en) 1975-10-27 1975-10-27 Spatsuta ring niyoruzetsuensouno chinchiyakuhou

Country Status (1)

Country Link
JP (1) JPS5922376B2 (en)

Also Published As

Publication number Publication date
JPS5922376B2 (en) 1984-05-26

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