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TOKYO SILICON DENSHI KK
Tokyo Sanyo Electric Co Ltd
Original Assignee
TOKYO SILICON DENSHI KK
Tokyo Sanyo Electric Co Ltd
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Filing date
Publication date
Application filed by TOKYO SILICON DENSHI KK, Tokyo Sanyo Electric Co LtdfiledCriticalTOKYO SILICON DENSHI KK
Priority to JP12621175ApriorityCriticalpatent/JPS5250178A/en
Publication of JPS5250178ApublicationCriticalpatent/JPS5250178A/en
PURPOSE: In a method of forming a semiconductor junction comprising formation of junctions of more than three layers, the elimination of the need of excessive facilitues and the reduction in production time are made possible.
COPYRIGHT: (C)1977,JPO&Japio
JP12621175A1975-10-201975-10-20Method of forming semiconductor junction
PendingJPS5250178A
(en)