JPS5247377A - Method of inactivating surface of group iii-v compound semiconductor - Google Patents

Method of inactivating surface of group iii-v compound semiconductor

Info

Publication number
JPS5247377A
JPS5247377A JP12307575A JP12307575A JPS5247377A JP S5247377 A JPS5247377 A JP S5247377A JP 12307575 A JP12307575 A JP 12307575A JP 12307575 A JP12307575 A JP 12307575A JP S5247377 A JPS5247377 A JP S5247377A
Authority
JP
Japan
Prior art keywords
compound semiconductor
group iii
inactivating
inactivating surface
gallium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12307575A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5653854B2 (no
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Original Assignee
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI KENKIYUU SHINKOUKAI, Semiconductor Research Foundation filed Critical HANDOUTAI KENKIYUU SHINKOUKAI
Priority to JP12307575A priority Critical patent/JPS5247377A/ja
Publication of JPS5247377A publication Critical patent/JPS5247377A/ja
Publication of JPS5653854B2 publication Critical patent/JPS5653854B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Led Devices (AREA)
JP12307575A 1975-10-13 1975-10-13 Method of inactivating surface of group iii-v compound semiconductor Granted JPS5247377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12307575A JPS5247377A (en) 1975-10-13 1975-10-13 Method of inactivating surface of group iii-v compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12307575A JPS5247377A (en) 1975-10-13 1975-10-13 Method of inactivating surface of group iii-v compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5247377A true JPS5247377A (en) 1977-04-15
JPS5653854B2 JPS5653854B2 (no) 1981-12-22

Family

ID=14851560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12307575A Granted JPS5247377A (en) 1975-10-13 1975-10-13 Method of inactivating surface of group iii-v compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5247377A (no)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129833A (ja) * 1984-10-09 1986-06-17 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 半導体装置の製造方法
JP2003347316A (ja) * 2002-05-30 2003-12-05 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6805982B2 (en) * 2002-05-16 2004-10-19 Ngk Insulators, Ltd. Epitaxial substrates and semiconductor devices
JP2009016848A (ja) * 2008-07-14 2009-01-22 Panasonic Corp 半導体装置及びその製造方法
CN103456603A (zh) * 2013-09-05 2013-12-18 大连理工大学 在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129833A (ja) * 1984-10-09 1986-06-17 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 半導体装置の製造方法
US6805982B2 (en) * 2002-05-16 2004-10-19 Ngk Insulators, Ltd. Epitaxial substrates and semiconductor devices
JP2003347316A (ja) * 2002-05-30 2003-12-05 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2009016848A (ja) * 2008-07-14 2009-01-22 Panasonic Corp 半導体装置及びその製造方法
CN103456603A (zh) * 2013-09-05 2013-12-18 大连理工大学 在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜

Also Published As

Publication number Publication date
JPS5653854B2 (no) 1981-12-22

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