JPS5242075A - Device for controlling gas atmosphere in semiconductor producing equip ment - Google Patents

Device for controlling gas atmosphere in semiconductor producing equip ment

Info

Publication number
JPS5242075A
JPS5242075A JP50117409A JP11740975A JPS5242075A JP S5242075 A JPS5242075 A JP S5242075A JP 50117409 A JP50117409 A JP 50117409A JP 11740975 A JP11740975 A JP 11740975A JP S5242075 A JPS5242075 A JP S5242075A
Authority
JP
Japan
Prior art keywords
gas atmosphere
controlling gas
equip ment
semiconductor producing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50117409A
Other languages
English (en)
Japanese (ja)
Other versions
JPS541624B2 (enExample
Inventor
Masao Yamawaki
Katsuo Aoki
Yoshio Oka
Takao Suzuki
Osamu Ina
Kunihiko Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP50117409A priority Critical patent/JPS5242075A/ja
Priority to US05/727,772 priority patent/US4096822A/en
Publication of JPS5242075A publication Critical patent/JPS5242075A/ja
Publication of JPS541624B2 publication Critical patent/JPS541624B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP50117409A 1975-09-29 1975-09-29 Device for controlling gas atmosphere in semiconductor producing equip ment Granted JPS5242075A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50117409A JPS5242075A (en) 1975-09-29 1975-09-29 Device for controlling gas atmosphere in semiconductor producing equip ment
US05/727,772 US4096822A (en) 1975-09-29 1976-09-29 Gaseous atmosphere control apparatus for a semiconductor manufacturing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50117409A JPS5242075A (en) 1975-09-29 1975-09-29 Device for controlling gas atmosphere in semiconductor producing equip ment

Publications (2)

Publication Number Publication Date
JPS5242075A true JPS5242075A (en) 1977-04-01
JPS541624B2 JPS541624B2 (enExample) 1979-01-26

Family

ID=14710922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50117409A Granted JPS5242075A (en) 1975-09-29 1975-09-29 Device for controlling gas atmosphere in semiconductor producing equip ment

Country Status (2)

Country Link
US (1) US4096822A (enExample)
JP (1) JPS5242075A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4950982A (enExample) * 1972-09-14 1974-05-17
JPS5885523A (ja) * 1981-11-17 1983-05-21 Nec Home Electronics Ltd 半導体製造装置
JPH01134911A (ja) * 1987-11-20 1989-05-26 Tel Sagami Ltd 縦形気相成長装置
JPH08316156A (ja) * 1995-05-24 1996-11-29 Nec Kyushu Ltd 半導体装置の製造装置
JP2012009641A (ja) * 2010-06-25 2012-01-12 Koyo Thermo System Kk 連続拡散処理装置
JP2012009638A (ja) * 2010-06-25 2012-01-12 Koyo Thermo System Kk 連続拡散処理装置
JP2015188095A (ja) * 2015-05-20 2015-10-29 光洋サーモシステム株式会社 連続拡散処理装置
JP2015201651A (ja) * 2015-05-20 2015-11-12 光洋サーモシステム株式会社 連続拡散処理装置
JP2015201650A (ja) * 2015-05-20 2015-11-12 光洋サーモシステム株式会社 連続拡散処理装置
JP2016100396A (ja) * 2014-11-19 2016-05-30 東京エレクトロン株式会社 ノズル及びこれを用いた基板処理装置

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5944771B2 (ja) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 半導体熱処理炉
JPS5942970B2 (ja) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 半導体熱処理用反応管
FR2463819A1 (fr) * 1979-08-21 1981-02-27 Thomson Csf Reacteur de depot chimique en phase vapeur fonctionnant sous basse pression
US4263872A (en) * 1980-01-31 1981-04-28 Rca Corporation Radiation heated reactor for chemical vapor deposition on substrates
US4401689A (en) * 1980-01-31 1983-08-30 Rca Corporation Radiation heated reactor process for chemical vapor deposition on substrates
US4819579A (en) * 1981-01-14 1989-04-11 Northern Telecom Limited Coating of semiconductor wafers and apparatus therefor
EP0181624B1 (en) * 1981-01-14 1989-12-06 Nortel Networks Corporation Coating of semiconductor wafers and apparatus therefor
US4696833A (en) * 1982-08-27 1987-09-29 Hewlett-Packard Company Method for applying a uniform coating to integrated circuit wafers by means of chemical deposition
AU549376B2 (en) * 1983-02-25 1986-01-23 Toyota Jidosha Kabushiki Kaisha Plasma treatment
JPH0817159B2 (ja) * 1985-08-15 1996-02-21 キヤノン株式会社 堆積膜の形成方法
FR2587731B1 (fr) * 1985-09-23 1988-01-08 Centre Nat Rech Scient Procede et dispositif de depot chimique de couches minces uniformes sur de nombreux substrats plans a partir d'une phase gazeuse
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
JPS62142778A (ja) * 1985-12-18 1987-06-26 Canon Inc 堆積膜形成法
JPH0645890B2 (ja) * 1985-12-18 1994-06-15 キヤノン株式会社 堆積膜形成法
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
US4834023A (en) * 1986-12-19 1989-05-30 Canon Kabushiki Kaisha Apparatus for forming deposited film
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US5279670A (en) * 1990-03-31 1994-01-18 Tokyo Electron Sagami Limited Vertical type diffusion apparatus
JP3373990B2 (ja) * 1995-10-30 2003-02-04 東京エレクトロン株式会社 成膜装置及びその方法
JP3554297B2 (ja) * 2001-07-26 2004-08-18 株式会社エフティーエル 半導体基板熱処理装置及び半導体素子の製造方法
US6808741B1 (en) * 2001-10-26 2004-10-26 Seagate Technology Llc In-line, pass-by method for vapor lubrication
KR100829327B1 (ko) * 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
US20030047536A1 (en) * 2002-10-02 2003-03-13 Johnson Wayne L. Method and apparatus for distributing gas within high density plasma process chamber to ensure uniform plasma
JP2005082880A (ja) * 2003-09-11 2005-03-31 Shoka Kagi Kofun Yugenkoshi 有機ｅｌ発光装置の成膜設備
US20060185589A1 (en) * 2005-02-23 2006-08-24 Raanan Zehavi Silicon gas injector and method of making
KR100909750B1 (ko) * 2005-03-01 2009-07-29 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 디바이스의 제조 방법
WO2007111348A1 (ja) * 2006-03-28 2007-10-04 Hitachi Kokusai Electric Inc. 基板処理装置
JP5568212B2 (ja) * 2007-09-19 2014-08-06 株式会社日立国際電気 基板処理装置、そのコーティング方法、基板処理方法及び半導体デバイスの製造方法
CN101813236B (zh) * 2009-12-01 2013-01-23 东莞宏威数码机械有限公司 气体输送装置及输送方法
JP5243519B2 (ja) * 2010-12-22 2013-07-24 東京エレクトロン株式会社 成膜装置
US9512519B2 (en) 2012-12-03 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Atomic layer deposition apparatus and method
KR102215965B1 (ko) * 2014-04-11 2021-02-18 주성엔지니어링(주) 가스 분사 장치 및 이를 포함하는 기판 처리 장치
US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process
KR102782608B1 (ko) * 2019-10-14 2025-03-14 삼성전자주식회사 반도체 제조 장비
CN115516132B (zh) * 2020-05-06 2025-06-20 应用材料公司 气体分配组件
JP7740821B2 (ja) * 2021-06-29 2025-09-17 東京エレクトロン株式会社 成膜装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944674A (enExample) * 1972-08-31 1974-04-26
JPS50118669A (enExample) * 1974-03-01 1975-09-17

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289833B (de) * 1964-12-29 1969-02-27 Siemens Ag Verfahren zum epitaktischen Abscheiden einer Halbleiterschicht
US3602192A (en) * 1969-05-19 1971-08-31 Ibm Semiconductor wafer processing
NL7003431A (enExample) * 1970-03-11 1971-09-14
US3678893A (en) * 1970-05-01 1972-07-25 Stewart Warner Corp Improved device for supporting semiconductor wafers
FR2227640B1 (enExample) * 1973-04-27 1977-12-30 Radiotechnique Compelec
US4018183A (en) * 1973-11-15 1977-04-19 U.S. Philips Corporation Apparatus for treating a plurality of semiconductor slices to a reacting gas current
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
JPS5245874A (en) * 1975-10-09 1977-04-11 Nippon Denso Co Ltd Transfer device of semiconductor substrate holding device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944674A (enExample) * 1972-08-31 1974-04-26
JPS50118669A (enExample) * 1974-03-01 1975-09-17

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4950982A (enExample) * 1972-09-14 1974-05-17
JPS5885523A (ja) * 1981-11-17 1983-05-21 Nec Home Electronics Ltd 半導体製造装置
JPH01134911A (ja) * 1987-11-20 1989-05-26 Tel Sagami Ltd 縦形気相成長装置
JPH08316156A (ja) * 1995-05-24 1996-11-29 Nec Kyushu Ltd 半導体装置の製造装置
JP2012009641A (ja) * 2010-06-25 2012-01-12 Koyo Thermo System Kk 連続拡散処理装置
JP2012009638A (ja) * 2010-06-25 2012-01-12 Koyo Thermo System Kk 連続拡散処理装置
JP2016100396A (ja) * 2014-11-19 2016-05-30 東京エレクトロン株式会社 ノズル及びこれを用いた基板処理装置
JP2015188095A (ja) * 2015-05-20 2015-10-29 光洋サーモシステム株式会社 連続拡散処理装置
JP2015201651A (ja) * 2015-05-20 2015-11-12 光洋サーモシステム株式会社 連続拡散処理装置
JP2015201650A (ja) * 2015-05-20 2015-11-12 光洋サーモシステム株式会社 連続拡散処理装置

Also Published As

Publication number Publication date
JPS541624B2 (enExample) 1979-01-26
US4096822A (en) 1978-06-27

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