JPS5236483A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5236483A
JPS5236483A JP50112923A JP11292375A JPS5236483A JP S5236483 A JPS5236483 A JP S5236483A JP 50112923 A JP50112923 A JP 50112923A JP 11292375 A JP11292375 A JP 11292375A JP S5236483 A JPS5236483 A JP S5236483A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
type
enhancing
isolations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50112923A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5416398B2 (enrdf_load_stackoverflow
Inventor
Masakatsu Yoshida
Atsutomo Toi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP50112923A priority Critical patent/JPS5236483A/ja
Publication of JPS5236483A publication Critical patent/JPS5236483A/ja
Publication of JPS5416398B2 publication Critical patent/JPS5416398B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
JP50112923A 1975-09-17 1975-09-17 Semiconductor integrated circuit Granted JPS5236483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50112923A JPS5236483A (en) 1975-09-17 1975-09-17 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50112923A JPS5236483A (en) 1975-09-17 1975-09-17 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5236483A true JPS5236483A (en) 1977-03-19
JPS5416398B2 JPS5416398B2 (enrdf_load_stackoverflow) 1979-06-21

Family

ID=14598862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50112923A Granted JPS5236483A (en) 1975-09-17 1975-09-17 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5236483A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462509U (enrdf_load_stackoverflow) * 1977-10-11 1979-05-01
JPS59167050A (ja) * 1984-03-05 1984-09-20 Hitachi Ltd 半導体装置
US4985738A (en) * 1978-01-06 1991-01-15 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
JPH04180249A (ja) * 1990-11-14 1992-06-26 Mitsubishi Electric Corp 集積回路装置
US5175598A (en) * 1978-01-06 1992-12-29 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US5227647A (en) * 1978-01-06 1993-07-13 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
JP2007302299A (ja) * 2006-05-11 2007-11-22 Yuyama Manufacturing Co Ltd バイアル瓶供給装置
US20170257025A1 (en) * 2016-03-04 2017-09-07 Infineon Technologies Ag Switched-Mode Power Converter with Cascode Circuit
US9985126B2 (en) 2016-03-04 2018-05-29 Infineon Technologies Ag Semiconductor device comprising a first gate electrode and a second gate electrode

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462509U (enrdf_load_stackoverflow) * 1977-10-11 1979-05-01
US4985738A (en) * 1978-01-06 1991-01-15 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US5175598A (en) * 1978-01-06 1992-12-29 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US5227647A (en) * 1978-01-06 1993-07-13 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
JPS59167050A (ja) * 1984-03-05 1984-09-20 Hitachi Ltd 半導体装置
JPH04180249A (ja) * 1990-11-14 1992-06-26 Mitsubishi Electric Corp 集積回路装置
JP2007302299A (ja) * 2006-05-11 2007-11-22 Yuyama Manufacturing Co Ltd バイアル瓶供給装置
US8047352B2 (en) 2006-05-11 2011-11-01 Yuyama Mfg. Co., Ltd. Vial supply device
US20170257025A1 (en) * 2016-03-04 2017-09-07 Infineon Technologies Ag Switched-Mode Power Converter with Cascode Circuit
US9985126B2 (en) 2016-03-04 2018-05-29 Infineon Technologies Ag Semiconductor device comprising a first gate electrode and a second gate electrode
US10128750B2 (en) * 2016-03-04 2018-11-13 Infineon Technologies Ag Switched-mode power converter with an inductive storage element and a cascode circuit

Also Published As

Publication number Publication date
JPS5416398B2 (enrdf_load_stackoverflow) 1979-06-21

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