JPS5416398B2 - - Google Patents

Info

Publication number
JPS5416398B2
JPS5416398B2 JP11292375A JP11292375A JPS5416398B2 JP S5416398 B2 JPS5416398 B2 JP S5416398B2 JP 11292375 A JP11292375 A JP 11292375A JP 11292375 A JP11292375 A JP 11292375A JP S5416398 B2 JPS5416398 B2 JP S5416398B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11292375A
Other languages
Japanese (ja)
Other versions
JPS5236483A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50112923A priority Critical patent/JPS5236483A/ja
Publication of JPS5236483A publication Critical patent/JPS5236483A/ja
Publication of JPS5416398B2 publication Critical patent/JPS5416398B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
JP50112923A 1975-09-17 1975-09-17 Semiconductor integrated circuit Granted JPS5236483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50112923A JPS5236483A (en) 1975-09-17 1975-09-17 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50112923A JPS5236483A (en) 1975-09-17 1975-09-17 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5236483A JPS5236483A (en) 1977-03-19
JPS5416398B2 true JPS5416398B2 (enrdf_load_stackoverflow) 1979-06-21

Family

ID=14598862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50112923A Granted JPS5236483A (en) 1975-09-17 1975-09-17 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5236483A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462509U (enrdf_load_stackoverflow) * 1977-10-11 1979-05-01
US4985738A (en) * 1978-01-06 1991-01-15 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US5175598A (en) * 1978-01-06 1992-12-29 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US5227647A (en) * 1978-01-06 1993-07-13 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
JPS59167050A (ja) * 1984-03-05 1984-09-20 Hitachi Ltd 半導体装置
JPH04180249A (ja) * 1990-11-14 1992-06-26 Mitsubishi Electric Corp 集積回路装置
JP4940752B2 (ja) 2006-05-11 2012-05-30 株式会社湯山製作所 バイアル瓶供給装置
US9985126B2 (en) 2016-03-04 2018-05-29 Infineon Technologies Ag Semiconductor device comprising a first gate electrode and a second gate electrode
US10128750B2 (en) * 2016-03-04 2018-11-13 Infineon Technologies Ag Switched-mode power converter with an inductive storage element and a cascode circuit

Also Published As

Publication number Publication date
JPS5236483A (en) 1977-03-19

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