JPS5236435A - Semiconductor memory unit - Google Patents
Semiconductor memory unitInfo
- Publication number
- JPS5236435A JPS5236435A JP11292575A JP11292575A JPS5236435A JP S5236435 A JPS5236435 A JP S5236435A JP 11292575 A JP11292575 A JP 11292575A JP 11292575 A JP11292575 A JP 11292575A JP S5236435 A JPS5236435 A JP S5236435A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- memory unit
- matri
- erasing
- write
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000011159 matrix material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/561—Multilevel memory cell aspects
- G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements
Landscapes
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11292575A JPS5236435A (en) | 1975-09-17 | 1975-09-17 | Semiconductor memory unit |
US05/658,052 US4053798A (en) | 1975-02-20 | 1976-02-13 | Negative resistance device |
CA246,101A CA1077622A (en) | 1975-02-20 | 1976-02-19 | Negative resistance device using complementary fet's |
DE2606744A DE2606744C2 (de) | 1975-02-20 | 1976-02-19 | Anordnung mit einem Paar komplementärer Feldeffekttransistoren |
GB6656/76A GB1520067A (en) | 1975-02-20 | 1976-02-19 | Negative resistance device |
FR7604657A FR2301893A1 (fr) | 1975-02-20 | 1976-02-19 | Dispositif a resistance negative |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11292575A JPS5236435A (en) | 1975-09-17 | 1975-09-17 | Semiconductor memory unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5236435A true JPS5236435A (en) | 1977-03-19 |
JPS5733636B2 JPS5733636B2 (enrdf_load_html_response) | 1982-07-17 |
Family
ID=14598914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11292575A Granted JPS5236435A (en) | 1975-02-20 | 1975-09-17 | Semiconductor memory unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5236435A (enrdf_load_html_response) |
-
1975
- 1975-09-17 JP JP11292575A patent/JPS5236435A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5733636B2 (enrdf_load_html_response) | 1982-07-17 |
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