JPS5733636B2 - - Google Patents

Info

Publication number
JPS5733636B2
JPS5733636B2 JP11292575A JP11292575A JPS5733636B2 JP S5733636 B2 JPS5733636 B2 JP S5733636B2 JP 11292575 A JP11292575 A JP 11292575A JP 11292575 A JP11292575 A JP 11292575A JP S5733636 B2 JPS5733636 B2 JP S5733636B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11292575A
Other languages
Japanese (ja)
Other versions
JPS5236435A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP11292575A priority Critical patent/JPS5236435A/ja
Priority to US05/658,052 priority patent/US4053798A/en
Priority to CA246,101A priority patent/CA1077622A/en
Priority to DE2606744A priority patent/DE2606744C2/de
Priority to GB6656/76A priority patent/GB1520067A/en
Priority to FR7604657A priority patent/FR2301893A1/fr
Publication of JPS5236435A publication Critical patent/JPS5236435A/ja
Publication of JPS5733636B2 publication Critical patent/JPS5733636B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/561—Multilevel memory cell aspects
    • G11C2211/5614—Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
JP11292575A 1975-02-20 1975-09-17 Semiconductor memory unit Granted JPS5236435A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP11292575A JPS5236435A (en) 1975-09-17 1975-09-17 Semiconductor memory unit
US05/658,052 US4053798A (en) 1975-02-20 1976-02-13 Negative resistance device
CA246,101A CA1077622A (en) 1975-02-20 1976-02-19 Negative resistance device using complementary fet's
DE2606744A DE2606744C2 (de) 1975-02-20 1976-02-19 Anordnung mit einem Paar komplementärer Feldeffekttransistoren
GB6656/76A GB1520067A (en) 1975-02-20 1976-02-19 Negative resistance device
FR7604657A FR2301893A1 (fr) 1975-02-20 1976-02-19 Dispositif a resistance negative

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11292575A JPS5236435A (en) 1975-09-17 1975-09-17 Semiconductor memory unit

Publications (2)

Publication Number Publication Date
JPS5236435A JPS5236435A (en) 1977-03-19
JPS5733636B2 true JPS5733636B2 (enrdf_load_html_response) 1982-07-17

Family

ID=14598914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11292575A Granted JPS5236435A (en) 1975-02-20 1975-09-17 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5236435A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPS5236435A (en) 1977-03-19

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