JPS5227277A - Darlington connction type semiconductor unit - Google Patents
Darlington connction type semiconductor unitInfo
- Publication number
- JPS5227277A JPS5227277A JP50102762A JP10276275A JPS5227277A JP S5227277 A JPS5227277 A JP S5227277A JP 50102762 A JP50102762 A JP 50102762A JP 10276275 A JP10276275 A JP 10276275A JP S5227277 A JPS5227277 A JP S5227277A
- Authority
- JP
- Japan
- Prior art keywords
- darlington
- connction
- type semiconductor
- semiconductor unit
- break
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50102762A JPS5227277A (en) | 1975-08-25 | 1975-08-25 | Darlington connction type semiconductor unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50102762A JPS5227277A (en) | 1975-08-25 | 1975-08-25 | Darlington connction type semiconductor unit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5227277A true JPS5227277A (en) | 1977-03-01 |
JPS5536189B2 JPS5536189B2 (ja) | 1980-09-19 |
Family
ID=14336193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50102762A Granted JPS5227277A (en) | 1975-08-25 | 1975-08-25 | Darlington connction type semiconductor unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5227277A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS567473A (en) * | 1979-06-29 | 1981-01-26 | Mitsubishi Electric Corp | Semiconductor switching device |
JPS56155569A (en) * | 1980-05-02 | 1981-12-01 | Nec Corp | Reverse conducting power transistor |
JPS60138964A (ja) * | 1983-12-27 | 1985-07-23 | Fuji Electric Co Ltd | 半導体装置 |
JPS61107773A (ja) * | 1984-10-30 | 1986-05-26 | Mitsubishi Electric Corp | 半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5022585A (ja) * | 1973-05-25 | 1975-03-11 | ||
JPS5081291A (ja) * | 1973-11-16 | 1975-07-01 |
-
1975
- 1975-08-25 JP JP50102762A patent/JPS5227277A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5022585A (ja) * | 1973-05-25 | 1975-03-11 | ||
JPS5081291A (ja) * | 1973-11-16 | 1975-07-01 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS567473A (en) * | 1979-06-29 | 1981-01-26 | Mitsubishi Electric Corp | Semiconductor switching device |
JPS56155569A (en) * | 1980-05-02 | 1981-12-01 | Nec Corp | Reverse conducting power transistor |
JPS60138964A (ja) * | 1983-12-27 | 1985-07-23 | Fuji Electric Co Ltd | 半導体装置 |
JPS61107773A (ja) * | 1984-10-30 | 1986-05-26 | Mitsubishi Electric Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS5536189B2 (ja) | 1980-09-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5227400A (en) | Power source device | |
JPS522284A (en) | Transfer magazine | |
JPS5227277A (en) | Darlington connction type semiconductor unit | |
JPS5275987A (en) | Gate protecting device | |
JPS51140490A (en) | Lateral transistor | |
JPS5273676A (en) | High output transistor device for high frequency | |
JPS525273A (en) | Transistor | |
JPS51134579A (en) | Semiconductor device | |
JPS53134373A (en) | Semiconductor integrated circuit device | |
JPS526036A (en) | Semiconductor memory circuit | |
JPS52123160A (en) | Transistor driving system | |
JPS51131256A (en) | Diode matrix circuit | |
JPS5236484A (en) | Semiconductor integrated circuit | |
JPS5277569A (en) | Logical circuit | |
JPS51138386A (en) | Lateral type transistor | |
JPS5367335A (en) | Integrated circuit formation current matching circuit | |
JPS5219978A (en) | Manufacture process for a semiconductor device | |
JPS5216099A (en) | Plte carber | |
JPS5229147A (en) | Semiconductor directoscillator | |
JPS52151574A (en) | Semiconductor device | |
JPS5372467A (en) | Manufacture for semiconductor device | |
JPS51114037A (en) | A peripheral circuit design for fixed insulation-gate semiconductor me mories | |
JPS5338938A (en) | Main memory extending device | |
JPS5354946A (en) | Transistor circuit device | |
JPS51114078A (en) | Construction of a semiconductor unit device |