JPS5225076B1 - - Google Patents
Info
- Publication number
- JPS5225076B1 JPS5225076B1 JP47026697A JP2669772A JPS5225076B1 JP S5225076 B1 JPS5225076 B1 JP S5225076B1 JP 47026697 A JP47026697 A JP 47026697A JP 2669772 A JP2669772 A JP 2669772A JP S5225076 B1 JPS5225076 B1 JP S5225076B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
- H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/126—Power FETs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12552871A | 1971-03-18 | 1971-03-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5225076B1 true JPS5225076B1 (OSRAM) | 1977-07-05 |
Family
ID=22420128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47026697A Pending JPS5225076B1 (OSRAM) | 1971-03-18 | 1972-03-17 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3700978A (OSRAM) |
| JP (1) | JPS5225076B1 (OSRAM) |
| BE (1) | BE780695A (OSRAM) |
| DE (1) | DE2212489C3 (OSRAM) |
| FR (1) | FR2130424B1 (OSRAM) |
| GB (1) | GB1376492A (OSRAM) |
| IT (1) | IT953974B (OSRAM) |
| NL (1) | NL155399B (OSRAM) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3971057A (en) * | 1973-08-21 | 1976-07-20 | The United States Of America As Represented By The Secretary Of The Navy | Lateral photodetector of improved sensitivity |
| CA1049127A (en) * | 1974-03-05 | 1979-02-20 | Kunio Itoh | Semiconductor devices with improved heat radiation and current concentration |
| US4252580A (en) * | 1977-10-27 | 1981-02-24 | Messick Louis J | Method of producing a microwave InP/SiO2 insulated gate field effect transistor |
| US4161739A (en) * | 1977-10-27 | 1979-07-17 | The United States Of America As Represented By The Secretary Of The Navy | Microwave InP/SiO2 insulated gate field effect transistor |
| US4194021A (en) * | 1977-10-27 | 1980-03-18 | The United States Of America As Represented By The Secretary Of The Navy | Microwave InP/SiO2 insulated gate field effect transistor |
| US4160984A (en) * | 1977-11-14 | 1979-07-10 | Hughes Aircraft Company | Schottky-gate field-effect transistor and fabrication process therefor |
| US4244097A (en) * | 1979-03-15 | 1981-01-13 | Hughes Aircraft Company | Schottky-gate field-effect transistor and fabrication process therefor |
| NL8003336A (nl) * | 1979-06-12 | 1980-12-16 | Dearnaley G | Werkwijze voor de vervaardiging van een halfgeleider- inrichting. |
| US5247349A (en) * | 1982-11-16 | 1993-09-21 | Stauffer Chemical Company | Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure |
| US4567503A (en) * | 1983-06-29 | 1986-01-28 | Stauffer Chemical Company | MIS Device employing elemental pnictide or polyphosphide insulating layers |
| JPH07118484B2 (ja) * | 1987-10-09 | 1995-12-18 | 沖電気工業株式会社 | ショットキーゲート電界効果トランジスタの製造方法 |
| JPH05299433A (ja) * | 1992-04-24 | 1993-11-12 | Toshiba Corp | ヘテロ接合バイポーラトランジスタ |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3484662A (en) * | 1965-01-15 | 1969-12-16 | North American Rockwell | Thin film transistor on an insulating substrate |
| GB1140579A (en) * | 1966-08-19 | 1969-01-22 | Standard Telephones Cables Ltd | Method of making semiconductor devices and devices made thereby |
| DE1564177A1 (de) * | 1966-09-03 | 1969-12-18 | Ibm Deutschland | Verfahren zur Herstellung von Halbleiterbauelementen |
| FR1563533A (OSRAM) * | 1967-05-20 | 1969-04-11 | ||
| GB1233545A (OSRAM) * | 1967-08-18 | 1971-05-26 | ||
| US3483443A (en) * | 1967-09-28 | 1969-12-09 | Hughes Aircraft Co | Diode having large capacitance change related to minimal applied voltage |
| US3563809A (en) * | 1968-08-05 | 1971-02-16 | Hughes Aircraft Co | Method of making semiconductor devices with ion beams |
-
1971
- 1971-03-18 US US125528A patent/US3700978A/en not_active Expired - Lifetime
-
1972
- 1972-03-15 BE BE780695A patent/BE780695A/xx unknown
- 1972-03-15 DE DE2212489A patent/DE2212489C3/de not_active Expired
- 1972-03-16 GB GB1224372A patent/GB1376492A/en not_active Expired
- 1972-03-17 NL NL727203614A patent/NL155399B/xx unknown
- 1972-03-17 IT IT67858/72A patent/IT953974B/it active
- 1972-03-17 JP JP47026697A patent/JPS5225076B1/ja active Pending
- 1972-03-17 FR FR7209520A patent/FR2130424B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2212489C3 (de) | 1974-08-15 |
| NL155399B (nl) | 1977-12-15 |
| DE2212489B2 (de) | 1974-01-17 |
| FR2130424A1 (OSRAM) | 1972-11-03 |
| NL7203614A (OSRAM) | 1972-09-20 |
| US3700978A (en) | 1972-10-24 |
| BE780695A (fr) | 1972-07-03 |
| FR2130424B1 (OSRAM) | 1974-09-13 |
| IT953974B (it) | 1973-08-10 |
| GB1376492A (en) | 1974-12-04 |
| DE2212489A1 (de) | 1972-10-05 |