JPS5223220B2 - - Google Patents
Info
- Publication number
- JPS5223220B2 JPS5223220B2 JP49145088A JP14508874A JPS5223220B2 JP S5223220 B2 JPS5223220 B2 JP S5223220B2 JP 49145088 A JP49145088 A JP 49145088A JP 14508874 A JP14508874 A JP 14508874A JP S5223220 B2 JPS5223220 B2 JP S5223220B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
- H01J37/1475—Scanning means magnetic
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US426393A US3914608A (en) | 1973-12-19 | 1973-12-19 | Rapid exposure of micropatterns with a scanning electron microscope |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5093571A JPS5093571A (ja) | 1975-07-25 |
JPS5223220B2 true JPS5223220B2 (ja) | 1977-06-22 |
Family
ID=23690627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49145088A Expired JPS5223220B2 (ja) | 1973-12-19 | 1974-12-19 |
Country Status (2)
Country | Link |
---|---|
US (1) | US3914608A (ja) |
JP (1) | JPS5223220B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0516355U (ja) * | 1991-08-26 | 1993-03-02 | ハリソン電機株式会社 | スタンプ台 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2294489A1 (fr) * | 1974-12-13 | 1976-07-09 | Thomson Csf | Dispositif pour le trace programme de dessins par bombardement de particules |
US4095104A (en) * | 1975-09-01 | 1978-06-13 | U.S. Philips Corporation | Electron microscope |
DE2547079C3 (de) * | 1975-10-17 | 1979-12-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Korpuskularbestrahlung eines Präparats |
JPS5316578A (en) * | 1976-07-30 | 1978-02-15 | Toshiba Corp | Electron beam exposure apparatus |
CA1100237A (en) * | 1977-03-23 | 1981-04-28 | Roger F.W. Pease | Multiple electron beam exposure system |
JPS52120686A (en) * | 1977-04-21 | 1977-10-11 | Jeol Ltd | Electronic ray exposure method |
US4163155A (en) * | 1978-04-07 | 1979-07-31 | Bell Telephone Laboratories, Incorporated | Defining a low-density pattern in a photoresist with an electron beam exposure system |
DE2837590A1 (de) * | 1978-08-29 | 1980-03-13 | Ibm Deutschland | Verfahren zur schattenwurfbelichtung |
JPS5543821A (en) * | 1978-09-22 | 1980-03-27 | Hitachi Ltd | Electronic drawing device |
JPS55138836A (en) * | 1979-04-16 | 1980-10-30 | Fujitsu Ltd | Electron beam exposure apparatus |
WO1980002772A1 (en) * | 1979-06-08 | 1980-12-11 | Fujitsu Ltd | Electron beam projecting system |
DE2936911A1 (de) * | 1979-09-12 | 1981-04-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zur regelung eines magnetischen ablenksystems |
JPS586130A (ja) * | 1981-07-03 | 1983-01-13 | Fujitsu Ltd | 電子ビ−ムの偏向補正方法 |
JPS5811960U (ja) * | 1981-07-15 | 1983-01-25 | 株式会社三協精機製作所 | 小型モ−タ− |
JPS58154230A (ja) * | 1982-03-10 | 1983-09-13 | Jeol Ltd | 電子ビ−ム露光方法 |
JPS58202529A (ja) * | 1982-05-21 | 1983-11-25 | Toshiba Corp | 荷電ビ−ム光学鏡筒 |
JPS59124719A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | 電子ビ−ム露光装置 |
JPS61192444U (ja) * | 1986-05-01 | 1986-11-29 | ||
CA1279732C (en) * | 1987-07-30 | 1991-01-29 | Hiroaki Tobuse | Electron beam direct drawing device |
US5546319A (en) * | 1994-01-28 | 1996-08-13 | Fujitsu Limited | Method of and system for charged particle beam exposure |
US5530251A (en) * | 1994-12-21 | 1996-06-25 | International Business Machines Corporation | Inductively coupled dual-stage magnetic deflection yoke |
DE19911372A1 (de) * | 1999-03-15 | 2000-09-28 | Pms Gmbh | Vorrichtung zum Steuern eines Strahls aus elektrisch geladenen Teilchen |
US20070000048A1 (en) * | 2004-12-16 | 2007-01-04 | Davis David T | Pneumatic lift and method for transferring an invalid patient |
DE102009052392A1 (de) * | 2009-11-09 | 2011-12-15 | Carl Zeiss Nts Gmbh | SACP-Verfahren und teilchenoptisches System zur Ausführung eines solchen Verfahrens |
JP2016027604A (ja) * | 2014-06-24 | 2016-02-18 | 株式会社荏原製作所 | 表面処理装置 |
EP3016130A1 (en) * | 2014-10-28 | 2016-05-04 | Fei Company | Composite scan path in a charged particle microscope |
US10534115B1 (en) * | 2017-09-22 | 2020-01-14 | Facebook Technologies, Llc | Gray-tone electron-beam lithography |
US11220028B1 (en) | 2018-03-08 | 2022-01-11 | Facebook Technologies, Llc | Method of manufacture for thin, multi-bend optics by compression molding |
US10976483B2 (en) | 2019-02-26 | 2021-04-13 | Facebook Technologies, Llc | Variable-etch-depth gratings |
US11709422B2 (en) | 2020-09-17 | 2023-07-25 | Meta Platforms Technologies, Llc | Gray-tone lithography for precise control of grating etch depth |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3491236A (en) * | 1967-09-28 | 1970-01-20 | Gen Electric | Electron beam fabrication of microelectronic circuit patterns |
US3699304A (en) * | 1969-12-15 | 1972-10-17 | Ibm | Electron beam deflection control method and apparatus |
US3644700A (en) * | 1969-12-15 | 1972-02-22 | Ibm | Method and apparatus for controlling an electron beam |
JPS4922351B1 (ja) * | 1969-12-25 | 1974-06-07 |
-
1973
- 1973-12-19 US US426393A patent/US3914608A/en not_active Expired - Lifetime
-
1974
- 1974-12-19 JP JP49145088A patent/JPS5223220B2/ja not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0516355U (ja) * | 1991-08-26 | 1993-03-02 | ハリソン電機株式会社 | スタンプ台 |
Also Published As
Publication number | Publication date |
---|---|
US3914608A (en) | 1975-10-21 |
JPS5093571A (ja) | 1975-07-25 |