JPS5222071A - Method of selective etching of film of polyamide resin - Google Patents

Method of selective etching of film of polyamide resin

Info

Publication number
JPS5222071A
JPS5222071A JP50098179A JP9817975A JPS5222071A JP S5222071 A JPS5222071 A JP S5222071A JP 50098179 A JP50098179 A JP 50098179A JP 9817975 A JP9817975 A JP 9817975A JP S5222071 A JPS5222071 A JP S5222071A
Authority
JP
Japan
Prior art keywords
film
polyamide resin
selective etching
etching
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50098179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5328342B2 (https=
Inventor
Atsushi Saiki
Toshio Ookubo
Tadayoshi Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50098179A priority Critical patent/JPS5222071A/ja
Priority to NL7604652A priority patent/NL7604652A/xx
Priority to DE2618937A priority patent/DE2618937C3/de
Priority to GB17720/76A priority patent/GB1510944A/en
Priority to FR7613338A priority patent/FR2321190A1/fr
Priority to US05/695,040 priority patent/US4113550A/en
Publication of JPS5222071A publication Critical patent/JPS5222071A/ja
Priority to US05/924,008 priority patent/US4218283A/en
Publication of JPS5328342B2 publication Critical patent/JPS5328342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means

Landscapes

  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
JP50098179A 1974-08-23 1975-08-13 Method of selective etching of film of polyamide resin Granted JPS5222071A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP50098179A JPS5222071A (en) 1975-08-13 1975-08-13 Method of selective etching of film of polyamide resin
NL7604652A NL7604652A (nl) 1975-08-13 1976-04-29 Werkwijze voor de vervaardiging van halfgelei- ders.
DE2618937A DE2618937C3 (de) 1975-08-13 1976-04-29 Ätzmittel für Polymerisatharze, insbesondere für die Halbleiterherstellung, und Verfahren zur Herstellung von Halbleiterbauelementen unter Verwendung dieses Ätzmittels
GB17720/76A GB1510944A (en) 1975-08-13 1976-04-30 Method for fabricating semiconductor device and etchant for polymer resin
FR7613338A FR2321190A1 (fr) 1975-08-13 1976-05-05 Composant semi-conducteur et son procede de fabrication
US05/695,040 US4113550A (en) 1974-08-23 1976-06-11 Method for fabricating semiconductor device and etchant for polymer resin
US05/924,008 US4218283A (en) 1974-08-23 1978-07-12 Method for fabricating semiconductor device and etchant for polymer resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50098179A JPS5222071A (en) 1975-08-13 1975-08-13 Method of selective etching of film of polyamide resin

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5151979A Division JPS557880A (en) 1979-04-27 1979-04-27 Etching solution for organic resin

Publications (2)

Publication Number Publication Date
JPS5222071A true JPS5222071A (en) 1977-02-19
JPS5328342B2 JPS5328342B2 (https=) 1978-08-14

Family

ID=14212791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50098179A Granted JPS5222071A (en) 1974-08-23 1975-08-13 Method of selective etching of film of polyamide resin

Country Status (5)

Country Link
JP (1) JPS5222071A (https=)
DE (1) DE2618937C3 (https=)
FR (1) FR2321190A1 (https=)
GB (1) GB1510944A (https=)
NL (1) NL7604652A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54179102U (https=) * 1978-06-07 1979-12-18
JPS557880A (en) * 1979-04-27 1980-01-21 Hitachi Ltd Etching solution for organic resin
JPS5515502A (en) * 1978-07-18 1980-02-02 Hitachi Ltd Running control system for manless wagon
US6303230B1 (en) 1995-01-17 2001-10-16 Nippon Steel Chemical Co., Ltd. Laminates

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106599A (en) * 1978-02-09 1979-08-21 Hitachi Chem Co Ltd Preparation of polyamide intermediate for semiconductor processing
JPS58108229A (ja) * 1981-12-21 1983-06-28 Hitachi Ltd ポリイミド系樹脂膜の選択エツチング方法
FR2550660B2 (fr) * 1982-04-14 1987-11-06 Commissariat Energie Atomique Perfectionnement au procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
FR2525389A1 (fr) * 1982-04-14 1983-10-21 Commissariat Energie Atomique Procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
FR2537779B1 (fr) * 1982-12-10 1986-03-14 Commissariat Energie Atomique Procede de positionnement d'un trou de contact electrique entre deux lignes d'interconnexion d'un circuit integre
DE3475856D1 (en) * 1983-08-12 1989-02-02 Commissariat Energie Atomique Method for aligning a connecting line above an electrical contact hole of an integrated circuit
EP0511691A3 (en) * 1988-07-13 1993-03-03 International Business Machines Corporation Wet etching of cured polyimide

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49120504A (https=) * 1973-03-16 1974-11-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49120504A (https=) * 1973-03-16 1974-11-18

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54179102U (https=) * 1978-06-07 1979-12-18
JPS5515502A (en) * 1978-07-18 1980-02-02 Hitachi Ltd Running control system for manless wagon
JPS557880A (en) * 1979-04-27 1980-01-21 Hitachi Ltd Etching solution for organic resin
US6303230B1 (en) 1995-01-17 2001-10-16 Nippon Steel Chemical Co., Ltd. Laminates

Also Published As

Publication number Publication date
DE2618937A1 (de) 1977-02-17
FR2321190A1 (fr) 1977-03-11
FR2321190B1 (https=) 1979-08-17
JPS5328342B2 (https=) 1978-08-14
NL7604652A (nl) 1977-02-15
DE2618937B2 (de) 1978-06-29
GB1510944A (en) 1978-05-17
DE2618937C3 (de) 1979-02-22

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