JPS5215277A - Semiconductor integrated circuit and its manufacturing method - Google Patents

Semiconductor integrated circuit and its manufacturing method

Info

Publication number
JPS5215277A
JPS5215277A JP9086275A JP9086275A JPS5215277A JP S5215277 A JPS5215277 A JP S5215277A JP 9086275 A JP9086275 A JP 9086275A JP 9086275 A JP9086275 A JP 9086275A JP S5215277 A JPS5215277 A JP S5215277A
Authority
JP
Japan
Prior art keywords
manufacturing
integrated circuit
semiconductor integrated
horizontal type
type bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9086275A
Other languages
Japanese (ja)
Inventor
Toshikazu Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP9086275A priority Critical patent/JPS5215277A/en
Publication of JPS5215277A publication Critical patent/JPS5215277A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve hFE of the horizontal type bipolar transistor and to reduce the current consumption by eliminating the occurrence of the parasitic Tr formed simultaneously when forming a vertical and horizontal type bipolar Tr on a common semiconductor substrate without the need of any extra difusion process.
JP9086275A 1975-07-25 1975-07-25 Semiconductor integrated circuit and its manufacturing method Pending JPS5215277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9086275A JPS5215277A (en) 1975-07-25 1975-07-25 Semiconductor integrated circuit and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9086275A JPS5215277A (en) 1975-07-25 1975-07-25 Semiconductor integrated circuit and its manufacturing method

Publications (1)

Publication Number Publication Date
JPS5215277A true JPS5215277A (en) 1977-02-04

Family

ID=14010353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9086275A Pending JPS5215277A (en) 1975-07-25 1975-07-25 Semiconductor integrated circuit and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5215277A (en)

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